OptiMOS Power-Transistor
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Infineon |
| Parts packaging code | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 810 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V |
| Maximum drain current (Abs) (ID) | 80 A |
| Maximum drain current (ID) | 80 A |
| Maximum drain-source on-resistance | 0.0051 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 300 W |
| Maximum pulsed drain current (IDM) | 320 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| SPP80N06S2-05 | SPB80N06S2-05 | |
|---|---|---|
| Description | OptiMOS Power-Transistor | OptiMOS Power-Transistor |
| Maker | Infineon | Infineon |
| Parts packaging code | TO-220AB | D2PAK |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 4 |
| Reach Compliance Code | unknow | unknow |
| ECCN code | EAR99 | EAR99 |
| Other features | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 810 mJ | 810 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V | 55 V |
| Maximum drain current (Abs) (ID) | 80 A | 80 A |
| Maximum drain current (ID) | 80 A | 80 A |
| Maximum drain-source on-resistance | 0.0051 Ω | 0.0048 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB | TO-263AB |
| JESD-30 code | R-PSFM-T3 | R-PSSO-G2 |
| JESD-609 code | e0 | e3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 300 W | 300 W |
| Maximum pulsed drain current (IDM) | 320 A | 320 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | YES |
| Terminal surface | TIN LEAD | MATTE TIN |
| Terminal form | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE |
| Transistor component materials | SILICON | SILICON |
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