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SRAS2035

Description
20 A, 40 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size70KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SRAS2035 Overview

20 A, 40 V, SILICON, RECTIFIER DIODE

SRAS2035 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.57 V
Humidity sensitivity level1
Maximum non-repetitive peak forward current350 A
Number of components1
Maximum operating temperature150 °C
Maximum output current20 A
Maximum repetitive peak reverse voltage35 V
surface mountYES
technologySCHOTTKY
SRAS2035
THRU
SRAS2045
20.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 45 Volts
Current
20.0 Amperes
Features
For surface mounted application
Low forward voltage drop
High current capability
High reliability
High surge current capabilit
y
D
2
PAK
Mechanical Data
Cases: D
2
PAK molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Lead solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
O
C/10 seconds at terminals
Weight: 1.70 grams
"
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
SRAS2035 SRAS2040 SRAS2045
Type Number
Maximum Recurrent Peak Reverse Voltage
V
RRM
35
40
45
Maximum RMS Voltage
V
RMS
25
28
32
Maximum DC Blocking Voltage
V
DC
35
40
45
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 20.0A
@ 40.0A
Maximum D.C. Reverse Current @ Tj=25℃
at Rated DC Blocking Voltage
@ Tj=125℃
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Units
V
V
V
A
A
V
mA
mA
℃/W
pF
I
(AV)
I
FSM
V
F
I
R
R
θ
JC
pF
T
J
20.0
350
0.57
0.73
2.7
105
1.5
900
-65 to +150
T
STG
-65 to +150
Notes: 1. Thermal Resistance from Junction to Case Per Leg,
2. Measured at 1MHz and Applied Reverse Voltage of 5.0V D.C.
- 186 -

SRAS2035 Related Products

SRAS2035 SRAS2045
Description 20 A, 40 V, SILICON, RECTIFIER DIODE 20 A, 40 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? conform to conform to
Maker Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.57 V 0.57 V
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 350 A 350 A
Number of components 1 1
Maximum operating temperature 150 °C 150 °C
Maximum output current 20 A 20 A
Maximum repetitive peak reverse voltage 35 V 45 V
surface mount YES YES
technology SCHOTTKY SCHOTTKY
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