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SS22

Description
2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size80KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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SS22 Overview

2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA

SS22 THRU SS26
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 60 Volts
DO-214AA
Forward Current -
2.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
250°C/10 seconds at terminals
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.203)
MAX.
MECHANICAL DATA
Case:
JEDEC DO-214AA molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.003 ounce, 0.093 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
SS22
SS23
SS24
SS25
SS26
UNITS
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L (SEE FIG. 1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
(NOTE 1)
S2
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
S3
30
21
30
S4
40
28
40
2.0
S5
50
35
50
S6
60
42
60
Volts
Volts
Volts
Amps
Amps
I
FSM
50.0
V
F
I
R
R
ΘJA
R
ΘJL
T
J
T
STG
0.50
0.4
10.0
75.0
17.0
-65 to +125
-65 to +150
0.70
Volts
Maximum DC reverse current
(NOTE 1)
T
A
=25°C
at rated DC blocking voltage
T
A
=100°C
Maximum thermal resistance
(NOTE 2)
Operating junction temperature range
Storage temperature range
NOTES:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
mA
°C/W
-65 to +150
°C
°C
4/98

SS22 Related Products

SS22 SS26 SS24 SS25 SS23
Description 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA RECTIFIER DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC
Number of terminals - 2 - 2 2
Number of components - 1 - 1 1
Processing package description - SMB, 2 PIN - Plastic, SMB, 2 PIN Plastic, SMAJ, 2 PIN
state - ACTIVE ACTIVE TRANSFERRED DISCONTINUED
packaging shape - Rectangle - Rectangle Rectangle
Package Size - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
surface mount - Yes - Yes Yes
Terminal form - C BEND - C BEND C BEND
Terminal location - pair - pair pair
Packaging Materials - Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy
Craftsmanship - SCHOTTKY - SCHOTTKY SCHOTTKY
structure - single - single single
Diode component materials - silicon - silicon silicon
Diode type - rectifier diode rectifier diode rectifier diode rectifier diode
application - GENERAL PURPOSE - EFFICIENCY GENERAL PURPOSE
Phase - 1 - 1 1
Maximum repetitive peak reverse voltage - 60 V - 50 V 30 V
Maximum average forward current - 2 A - 2 A 2 A
Maximum non-repetitive peak forward current - 50 A - 75 A 50 A
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