SS26 datasheet, PDF - EEWORLD Datasheet

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SS26: Description2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA; Categorysemiconductor Discrete semiconductor; File Size80KB，2 Pages; ManufacturerGE Sensing ( Amphenol Advanced Sensors ); Websitehttp://www.vishay.com/

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SS26 Overview

2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA

SS26 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	SMB, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Diode component materials	silicon
Maximum power consumption limit	1.3 W
Diode type	rectifier diode
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	60 V
Maximum average forward current	2 A
Maximum non-repetitive peak forward current	50 A

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SS22 THRU SS26

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Reverse Voltage -

20 to 60 Volts

DO-214AA

Forward Current -

2.0 Amperes

FEATURES

♦

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦

For surface mounted applications

♦

Low profile package

♦

Built-in strain relief

♦

Metal silicon junction, majority carrier conduction

♦

Low power loss, high efficiency

♦

High current capability, low forward voltage drop

♦

High surge capability

♦

For use in low voltage high frequency inverters, free

wheeling, and polarity protection applications

♦

Guardring for overvoltage protection

♦

High temperature soldering guaranteed:

250°C/10 seconds at terminals

0.086 (2.20)

0.077 (1.95)

0.155 (3.94)

0.130 (3.30)

0.180 (4.57)

0.160 (4.06)

0.012 (0.305)

0.006 (0.152)

0.096 (2.44)

0.084 (2.13)

0.060 (1.52)

0.030 (0.76)

0.220 (5.59)

0.205 (5.21)

0.008 (0.203)

MAX.

MECHANICAL DATA

Case:

JEDEC DO-214AA molded plastic body

Terminals:

Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity:

Color band denotes cathode end

Weight:

0.003 ounce, 0.093 gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

SS22

SS23

SS24

SS25

SS26

UNITS

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

at T

L (SEE FIG. 1)

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 2.0A

(NOTE 1)

S2

V

RRM

V

RMS

V

DC

I

(AV)

20

14

20

S3

30

21

30

S4

40

28

40

2.0

S5

50

35

50

S6

60

42

60

Volts

Amps

I

FSM

50.0

V

F

I

R

ΘJA

R

ΘJL

T

J

T

STG

0.50

0.4

10.0

75.0

17.0

-65 to +125

-65 to +150

0.70

Volts

Maximum DC reverse current

(NOTE 1)

T

A

=25°C

at rated DC blocking voltage

T

A

=100°C

Maximum thermal resistance

(NOTE 2)

Operating junction temperature range

Storage temperature range

NOTES:

(1) Pulse test: 300µs pulse width, 1% duty cycle

(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas

mA

°C/W

-65 to +150

°C

4/98

SS26 Related Products

	SS26	SS24	SS25	SS23	SS22
Description	2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA	RECTIFIER DIODE	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC	2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA
Number of terminals	2	-	2	2	-
Number of components	1	-	1	1	-
Processing package description	SMB, 2 PIN	-	Plastic, SMB, 2 PIN	Plastic, SMAJ, 2 PIN	-
state	ACTIVE	ACTIVE	TRANSFERRED	DISCONTINUED	-
packaging shape	Rectangle	-	Rectangle	Rectangle	-
Package Size	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	-
surface mount	Yes	-	Yes	Yes	-
Terminal form	C BEND	-	C BEND	C BEND	-
Terminal location	pair	-	pair	pair	-
Packaging Materials	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy	-
Craftsmanship	SCHOTTKY	-	SCHOTTKY	SCHOTTKY	-
structure	single	-	single	single	-
Diode component materials	silicon	-	silicon	silicon	-
Diode type	rectifier diode	rectifier diode	rectifier diode	rectifier diode	-
application	GENERAL PURPOSE	-	EFFICIENCY	GENERAL PURPOSE	-
Phase	1	-	1	1	-
Maximum repetitive peak reverse voltage	60 V	-	50 V	30 V	-
Maximum average forward current	2 A	-	2 A	2 A	-
Maximum non-repetitive peak forward current	50 A	-	75 A	50 A	-

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