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BCR164

Description
PNP Silicon Digital Transistor
File Size172KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BCR164 Overview

PNP Silicon Digital Transistor

BCR164...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 4.7kΩ ,
R
2
= 10kΩ )
BCR164F/L3
BCR164T
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
Marking
Pin Configuration
Package
BCR164F*
BCR164L3*
BCR164T*
* Preliminary
Maximum Ratings
Parameter
U6s
U6
U6s
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
TSFP-3
TSLP-3-4
SC75
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
Value
50
50
5
15
100
250
250
250
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR164F,
T
S
128°C
BCR164L3,
T
S
135°C
BCR164T,
T
S
109°C
Junction temperature
Storage temperature
1
mA
mW
T
j
T
stg
150
-65 ... 150
°C
Sep-03-2003

BCR164 Related Products

BCR164 BCR164T BCR164F BCR164L3
Description PNP Silicon Digital Transistor PNP Silicon Digital Transistor PNP Silicon Digital Transistor PNP Silicon Digital Transistor
Is it Rohs certified? - conform to conform to conform to
package instruction - SC-75, 3 PIN TSFP-3 TSLP-3
Contacts - 3 3 3
Reach Compliance Code - compli compli _compli
ECCN code - EAR99 EAR99 EAR99
Other features - BUILT-IN BIAS RESISTOR RATIO IS 2.13 BUILT-IN BIAS RESISTOR RATIO IS 2.13 BUILT-IN BIAS RESISTOR RATIO IS 2.13
Maximum collector current (IC) - 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage - 50 V 50 V 50 V
Configuration - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) - 30 30 30
JESD-30 code - R-PDSO-G3 R-PDSO-F3 R-XBCC-N3
JESD-609 code - e3 e3 e3
Number of components - 1 1 1
Number of terminals - 3 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY UNSPECIFIED
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE CHIP CARRIER
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - PNP PNP PNP
Maximum power dissipation(Abs) - 0.25 W 0.25 W 0.25 W
Certification status - Not Qualified Not Qualified Not Qualified
surface mount - YES YES YES
Terminal surface - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form - GULL WING FLAT NO LEAD
Terminal location - DUAL DUAL BOTTOM
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON
Nominal transition frequency (fT) - 160 MHz 160 MHz 160 MHz
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