PNP Silicon Digital Transistor
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| Objectid | 1993443848 |
| package instruction | TSLP-3 |
| Contacts | 3 |
| Reach Compliance Code | _compli |
| ECCN code | EAR99 |
| compound_id | 10903128 |
| Other features | BUILT-IN BIAS RESISTOR RATIO IS 2.13 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 30 |
| JESD-30 code | R-XBCC-N3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.25 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | NO LEAD |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 160 MHz |
| BCR164L3 | BCR164 | BCR164T | BCR164F | |
|---|---|---|---|---|
| Description | PNP Silicon Digital Transistor | PNP Silicon Digital Transistor | PNP Silicon Digital Transistor | PNP Silicon Digital Transistor |
| Is it Rohs certified? | conform to | - | conform to | conform to |
| package instruction | TSLP-3 | - | SC-75, 3 PIN | TSFP-3 |
| Contacts | 3 | - | 3 | 3 |
| Reach Compliance Code | _compli | - | compli | compli |
| ECCN code | EAR99 | - | EAR99 | EAR99 |
| Other features | BUILT-IN BIAS RESISTOR RATIO IS 2.13 | - | BUILT-IN BIAS RESISTOR RATIO IS 2.13 | BUILT-IN BIAS RESISTOR RATIO IS 2.13 |
| Maximum collector current (IC) | 0.1 A | - | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 50 V | - | 50 V | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | - | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| Minimum DC current gain (hFE) | 30 | - | 30 | 30 |
| JESD-30 code | R-XBCC-N3 | - | R-PDSO-G3 | R-PDSO-F3 |
| JESD-609 code | e3 | - | e3 | e3 |
| Number of components | 1 | - | 1 | 1 |
| Number of terminals | 3 | - | 3 | 3 |
| Package body material | UNSPECIFIED | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| Package form | CHIP CARRIER | - | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | PNP | - | PNP | PNP |
| Maximum power dissipation(Abs) | 0.25 W | - | 0.25 W | 0.25 W |
| Certification status | Not Qualified | - | Not Qualified | Not Qualified |
| surface mount | YES | - | YES | YES |
| Terminal surface | Matte Tin (Sn) | - | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal form | NO LEAD | - | GULL WING | FLAT |
| Terminal location | BOTTOM | - | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | - | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | - | SILICON | SILICON |
| Nominal transition frequency (fT) | 160 MHz | - | 160 MHz | 160 MHz |
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