SMSG130 datasheet, PDF - EEWORLD Datasheet

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SMSG130: DescriptionTrans Voltage Suppressor Diode, 600W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size139KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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SMSG130 Overview

Trans Voltage Suppressor Diode, 600W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2

SMSG130 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
package instruction	R-PDSO-J2
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum breakdown voltage	176 V
Minimum breakdown voltage	144 V
Breakdown voltage nominal value	144 V
Maximum clamping voltage	231 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-J2
JESD-609 code	e0
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	130 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal location	DUAL

SMSG130 Related Products

	SMSG130	SMSG150A	SMSG150
Description	Trans Voltage Suppressor Diode, 600W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2	Trans Voltage Suppressor Diode, 600W, 150V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2	Trans Voltage Suppressor Diode, 600W, 150V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Microsemi	Microsemi	Microsemi
package instruction	R-PDSO-J2	R-PDSO-J2	R-PDSO-J2
Reach Compliance Code	_compli	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99
Maximum breakdown voltage	176 V	185 V	204 V
Minimum breakdown voltage	144 V	167 V	167 V
Breakdown voltage nominal value	144 V	167 V	167 V
Maximum clamping voltage	231 V	243 V	268 V
Configuration	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA	DO-214AA	DO-214AA
JESD-30 code	R-PDSO-J2	R-PDSO-J2	R-PDSO-J2
JESD-609 code	e0	e0	e0
Maximum non-repetitive peak reverse power dissipation	600 W	600 W	600 W
Number of components	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	130 V	150 V	150 V
surface mount	YES	YES	YES
technology	AVALANCHE	AVALANCHE	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	J BEND	J BEND
Terminal location	DUAL	DUAL	DUAL
Is Samacsys	-	N	N
Base Number Matches	-	1	1

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