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GS8161Z18BD-200IVT

Description
ZBT SRAM, 1MX18, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
Categorystorage    storage   
File Size2MB,34 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric View All

GS8161Z18BD-200IVT Overview

ZBT SRAM, 1MX18, 6.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165

GS8161Z18BD-200IVT Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerGSI Technology
Parts packaging codeBGA
package instruction13 X 15 MM, 1 MM PITCH, FPBGA-165
Contacts165
Reach Compliance Code_compli
ECCN code3A991.B.2.A
Maximum access time6.5 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHTECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density18874368 bi
Memory IC TypeZBT SRAM
memory width18
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX18
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
GS8161ZxxB(T/D)-xxxV
100-Pin TQFP & 165-Bump BGA
Commercial Temp
Industrial Temp
Features
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through
NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 100-lead TQFP and 165-bump FP-BGA
packages
• RoHS-compliant TQFPand BGA packages available
18Mb Pipelined and Flow Through
Synchronous NBT SRAM
250 MHz–150 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
me
nd
ed
for
Ne
w
The GS8161ZxxB(T/D)-xxxV is an 18Mbit Synchronous
Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL
or other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
-250
3.0
4.0
280
330
5.5
5.5
210
240
-200
3.0
5.0
230
270
6.5
6.5
185
205
-150
3.8
6.7
185
210
7.5
7.5
170
190
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Re
co
m
Pipeline
3-1-1-1
t
KQ
(x18/x36)
tCycle
No
t
Flow Through
2-1-1-1
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
Rev: 1.03 9/2008
1/34
De
sig
Functional Description
n—
Di
sco
nt
inu
ed
Pr
od
u
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8161ZxxB(T/D)-xxxV may be configured by the user
to operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8161ZxxB(T/D)-xxxV is implemented with GSI's high
performance CMOS technology and is available in JEDEC-
standard 100-pin TQFP and 165-bump FP-BGA packages.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ct
© 2004, GSI Technology
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