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MSS39,045-P55

Description
Mixer Diode, KU Band, Silicon, HERMETIC SEALED, CERAMIC, CASE P55, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size524KB,4 Pages
ManufacturerCobham PLC
Download Datasheet Parametric View All

MSS39,045-P55 Overview

Mixer Diode, KU Band, Silicon, HERMETIC SEALED, CERAMIC, CASE P55, 2 PIN

MSS39,045-P55 Parametric

Parameter NameAttribute value
MakerCobham PLC
package instructionR-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionANODE
ConfigurationSINGLE
Maximum diode capacitance0.25 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandKU BAND
JESD-30 codeR-CEMW-N2
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formMICROWAVE
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationEND
MSS39,000 Series
P-Type Silicon Schottky Diodes
Description
The Aeroflex / Metelics MSS39,000 series of Schottky diodes is
fabricated on P-Type epitaxial substrates for superior 1/f noise
performance in microwave biased-detector applications up to 40
GHz.
Features
Very low 1/f Noise
Detector applications to 40 GHz
Chip, beam lead or packaged devices
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Operation Temperature
Storage Temperature
Power Dissipation
Soldering Temperature (Packaged)
Beam Lead Pull Strength, Min
Rated V
BR
50 mA
-65 ºC to +150 ºC
-65 ºC to +150 ºC
100 mW, derated linearly to zero at T
A
= +150 ºC
+ 230 ºC for 5 sec.
4 grams
Rating
Chip
Electrical Specifications,
T
A
= 25 ºC
Model
MSS39,045-C15
MSS39,048-C15
Test
Conditions
V
BR
MIN
V
F
TYP
C
J
MAX
T
SS
TYP
γ
TYP
Frequency
MAX
Outline
V
V
pF
dBm
mV / mW
GHz
5.0
5.0
I
R
= 10
μA
0.40
0.39
I
F
= 1 mA
0.10
0.15
V
R
= 0 V
F = 1 MHz
-58
-58
DC Bias = 10
μA
R
L
= 100 KΩ
5,000
5,000
F = 10 GHz
Video BW = 2 MHz
18
12
C15
C15
Revision Date: 10/15/2010
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