BL
GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High surge current capability
Easily cleaned with alcohol,Isopropanol
and similar s olvents
The plastic material carries U/L recognition 94V-0
EGP30A(Z)
--- EGP30K(Z)
VOLTAGE RANGE: 50 ---
800
V
CURRENT: 3.0 A
DO - 27
MECHANICAL DATA
Case:JEDEC DO--27,molded plas tic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15grams
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unles s otherwise s pecified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EGP EGP EGP EGP EGP EGP
EGP EGP
UNITS
30A 30B 30C 30D 30F 30G
30J 30K
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
@T
A
=25
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=125
(Note2)
(Note3)
Maximum reverse recovery time (Note1)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
R
θ
JL
T
J
T
STG
50
35
50
100
70
100
150
105
150
200
140
200
3.0
300
210
300
400
280
400
600
420
600
800
560
800
V
V
V
A
125.0
A
0.95
5.0
100.0
50
95
1.25
1.7
V
A
75
75
ns
pF
/W
/W
Typical thermal resistance
Storage temperature range
(Note4)
Operating junction temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
20
8.5
- 55 ---- + 150
- 55 ---- + 150
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
4.Thermal resistance junction to lead.
Document Number 0262010
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
t
rr
50
N1.
10
N1.
EGP30A(Z)---EGP30K(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
+0.5A
D .T.
.U
(+)
25V C
D
(approx)
(-)
1
NN -
O IN
DC E
U TIV
(+)
0
P LS
U E
G N R TO
EEA R
(N TE
O 2)
OC S OE
S ILLO C P
(N TE1)
O
(-)
-0 .2 5 A
-1 .0 A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 20/30 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
FIG.3 -- FORWARD DERATING CURVE
z
AVERAGE FORWARD CURRENT
AMPERES
100
EG 30F-E P30G
P
G
T
J
=25
Pulse Width=300
µ
S
3.0
10
2.0
AMPERES
EGP30A-EGP30D
Single Phase
Half W ave 60Hz
Resistive or
Inductive Load
EGP30J-EGP30K
1.0
1
0
0
25
50
75
100
125
150
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
1.8 2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.5 -- PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
175
150
125
100
75
50
25
0
0.1
EGP30A-EGP30D
EGP30F&EG
P30K
T
J
=25
175
150
125
100
75
50
25
0
1
10
100
T
J
=125 .
3ms Single Half
Sine-Wave
1
4
10
100
1000
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60Hz
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Document Number 0262010
BL
GALAXY ELECTRICAL
2.
DSP and ARM Processors
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