BUX39.MODR1 datasheet, PDF - EEWORLD Datasheet

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BUX39.MODR1: DescriptionPower Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size186KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BUX39.MODR1 Overview

Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

BUX39.MODR1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	TO-3, 2 PIN
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	30 A
Collector-emitter maximum voltage	90 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e1
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	8 MHz

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SILICON EPITAXIAL

NPN TRANSISTOR

BUX39

•

High Current Capability.

Hermetic TO3 Metal package.

Ideally suited for Motor Control, Switching

and Linear Applications

Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VCBO

VCEX

VCER

VCEO

VEBO

IC

ICM

IB

PD

TJ

Tstg

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Total Power Dissipation at

Junction Temperature Range

Storage Temperature Range

VBE = -1.5V

RBE = 100

120V

110V

90V

7V

30A

40A

6A

120W

0.68W/°C

-65 to +200°C

tp = 10ms

TC = 25°C

Derate Above 25°C

THERMAL PROPERTIES

Symbols

R

θJC

Parameters

Thermal Resistance, Junction To Case

Max.

1.46

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 9312

Issue 1

Page 1 of 3

Website:

http://www.semelab-tt.com

BUX39.MODR1 Related Products

	BUX39.MODR1	BUX39R1	BUX39.MOD
Description	Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Is it Rohs certified?	conform to	conform to	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	TO-3, 2 PIN	FLANGE MOUNT, O-MBFM-P2	TO-3, 2 PIN
Reach Compliance Code	compli	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	30 A	30 A	30 A
Collector-emitter maximum voltage	90 V	90 V	90 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20
JEDEC-95 code	TO-3	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1
Number of terminals	2	2	2
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8 MHz	8 MHz	8 MHz
JESD-609 code	e1	e1	-
Terminal surface	TIN SILVER COPPER	TIN SILVER COPPER	-

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