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BAT54W

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size31KB,5 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BAT54W Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT54W Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.8 V
JESD-609 codee3
Maximum non-repetitive peak forward current0.6 A
Number of components1
Maximum operating temperature150 °C
Maximum output current0.2 A
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMatte Tin (Sn)
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BAT54W series
Schottky barrier (double) diodes
Product specification
Supersedes data of October 1993
1996 Mar 19

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Description 0.2 A, 30 V, SILICON, SIGNAL DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.3 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE RECTIFIER DIODES,DOUBLER,SCHOTTKY,30V V(RRM),SOT-323
Is it Rohs certified? conform to conform to conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow unknow
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.8 V 0.8 V 0.8 V 0.8 V
JESD-609 code e3 e3 e3 e3
Maximum non-repetitive peak forward current 0.6 A 0.6 A 0.6 A 0.6 A
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Maximum output current 0.2 A 0.2 A 0.2 A 0.2 A
Maximum repetitive peak reverse voltage 30 V 30 V 30 V 30 V
surface mount YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
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