BAT54 datasheet, PDF - EEWORLD Datasheet

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BAT54: Description0.2 A, 30 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size77KB，3 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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BAT54 Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT54 Parametric

Parameter Name	Attribute value
Number of terminals	3
Number of components	1
Processing package description	ROHS COMPLIANT, PLASTIC PACKAGE-3
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Diode component materials	silicon
Maximum power consumption limit	0.2250 W
Diode type	Signal diode
Maximum repetitive peak reverse voltage	30 V
Maximum average forward current	0.2000 A

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MCC

Features

•

Low Forward Voltage

Surface Mount device

Very small conduction losses

omponents

21201 Itasca Street Chatsworth

!"#

$ % !"#

BAT54

THRU

BAT54S

250mWatt, 30Volt

Schottky Barrier Diode

Type

Single

Dual

Configuration

(See Page 3)

MCC

Catalog

Number

BAT54

BAT54A

BAT54C

BAT54S

Device

Marking

L4P

L42

L43

L44

Figure 1

Figure 2

Figure 3

Figure 4

SOT-23

A

D

C

B

Maximum Ratings

Continuos Reverse Voltage

Forward Current

Non-Repetitive Peak Forward Current t<1s

Total Power Dissipation @ T

A

= 25°C

Storage Temperature Range

Junction Temperature

Soldering temperature during 10s

V

R

I

F

I

FSM

P

D

T

stg

T

j

T

j

30V

0.3A

1.0mA

250mW

-55°C to 150°C

150°C

260°C

G

F

E

H

J

K

DIMENSIONS

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MM

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

Electrical Characteristics @ 25

°C

Unless Otherwise Specified

Ratings

Forward Voltage at

I

F

= 0.1mA

I

F

= 1mA

I

F

= 10mA

I

F

= 30mA

I

F

= 100mA

Reverse Current

Reverse Breakdown

Voltage

Capacitance

Reverse Recovery

Time

Thermal Resistance,

Junction to Ambient

Symbol

Max.

240mV

320mV

400mV

500mV

900mV

2.0 uA

>30V

10pF

5nS

500K/W

Notes

V

F

DIM

A

B

C

D

E

F

G

H

J

K

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Suggested Solder

Pad Layout

V

R

= 25V

.035

.900

.031

.800

I

R

V

(BR)

C

J

t

rr

R

θJA

Measured at

1.0MHz, V

R

=1.0V

I

F

=I

R

=10mA;

I

(REC)

= 1mA

.037

.950

.037

.950

.079

2.000

inches

mm

www.mccsemi.com

BAT54 Related Products

	BAT54	BAT54A	BAT54C	BAT54S
Description	0.2 A, 30 V, SILICON, SIGNAL DIODE	0.3 A, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals	3	3	3	3
Number of components	1	2	2	2
Processing package description	ROHS COMPLIANT, PLASTIC PACKAGE-3	Surface mount, 3 PIN	ROHS COMPLIANT, PLASTIC PACKAGE-3	SOT-23, 3 PIN
state	ACTIVE	DISCONTINUED	ACTIVE	DISCONTINUED
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
Craftsmanship	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
structure	single	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	系列 CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	silicon	silicon	silicon	silicon
Maximum power consumption limit	0.2250 W	0.2500 W	0.2250 W	0.2000 W
Diode type	Signal diode	Signal diode	Signal diode	Signal diode
Maximum average forward current	0.2000 A	0.3000 A	0.2000 A	0.2000 A
Maximum repetitive peak reverse voltage	30 V	-	30 V	30 V

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