Synchronous DRAM Module, 8MX72, 6ns, CMOS
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| package instruction | DIMM, DIMM168 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 6 ns |
| Other features | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 100 MHz |
| I/O type | COMMON |
| JESD-30 code | R-XDMA-N168 |
| memory density | 603979776 bi |
| Memory IC Type | SYNCHRONOUS DRAM MODULE |
| memory width | 72 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 168 |
| word count | 8388608 words |
| character code | 8000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 8MX72 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| encapsulated code | DIMM |
| Encapsulate equivalent code | DIMM168 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| power supply | 3.3 V |
| Certification status | Not Qualified |
| refresh cycle | 4096 |
| self refresh | YES |
| Maximum standby current | 0.009 A |
| Maximum slew rate | 1.35 mA |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | DUAL |
| KMM374S823BT-GL | KMM374S823BT-G8 | KMM374S823BT-GH | |
|---|---|---|---|
| Description | Synchronous DRAM Module, 8MX72, 6ns, CMOS | Synchronous DRAM Module, 8MX72, 6ns, CMOS | Synchronous DRAM Module, 8MX72, 6ns, CMOS |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG |
| package instruction | DIMM, DIMM168 | DIMM, DIMM168 | DIMM, DIMM168 |
| Reach Compliance Code | unknow | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| Maximum access time | 6 ns | 6 ns | 6 ns |
| Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 100 MHz | 125 MHz | 100 MHz |
| I/O type | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 |
| memory density | 603979776 bi | 603979776 bit | 603979776 bit |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
| memory width | 72 | 72 | 72 |
| Number of functions | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 |
| Number of terminals | 168 | 168 | 168 |
| word count | 8388608 words | 8388608 words | 8388608 words |
| character code | 8000000 | 8000000 | 8000000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C |
| organize | 8MX72 | 8MX72 | 8MX72 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| encapsulated code | DIMM | DIMM | DIMM |
| Encapsulate equivalent code | DIMM168 | DIMM168 | DIMM168 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| power supply | 3.3 V | 3.3 V | 3.3 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 4096 | 4096 | 4096 |
| self refresh | YES | YES | YES |
| Maximum standby current | 0.009 A | 0.009 A | 0.009 A |
| Maximum slew rate | 1.35 mA | 1.35 mA | 1.35 mA |
| Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V |
| surface mount | NO | NO | NO |
| technology | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | NO LEAD | NO LEAD | NO LEAD |
| Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm |
| Terminal location | DUAL | DUAL | DUAL |
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