Synchronous DRAM Module, 8MX72, 6ns, CMOS
Parameter Name | Attribute value |
Maker | SAMSUNG |
package instruction | DIMM, DIMM168 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 6 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 100 MHz |
I/O type | COMMON |
JESD-30 code | R-XDMA-N168 |
memory density | 603979776 bit |
Memory IC Type | SYNCHRONOUS DRAM MODULE |
memory width | 72 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 168 |
word count | 8388608 words |
character code | 8000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 8MX72 |
Output characteristics | 3-STATE |
Package body material | UNSPECIFIED |
encapsulated code | DIMM |
Encapsulate equivalent code | DIMM168 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
power supply | 3.3 V |
Certification status | Not Qualified |
refresh cycle | 4096 |
self refresh | YES |
Maximum standby current | 0.009 A |
Maximum slew rate | 1.35 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal pitch | 1.27 mm |
Terminal location | DUAL |
KMM374S823BT-GH | KMM374S823BT-G8 | KMM374S823BT-GL | |
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Description | Synchronous DRAM Module, 8MX72, 6ns, CMOS | Synchronous DRAM Module, 8MX72, 6ns, CMOS | Synchronous DRAM Module, 8MX72, 6ns, CMOS |
Maker | SAMSUNG | SAMSUNG | SAMSUNG |
package instruction | DIMM, DIMM168 | DIMM, DIMM168 | DIMM, DIMM168 |
Reach Compliance Code | unknown | unknown | unknow |
ECCN code | EAR99 | EAR99 | EAR99 |
access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
Maximum access time | 6 ns | 6 ns | 6 ns |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 100 MHz | 125 MHz | 100 MHz |
I/O type | COMMON | COMMON | COMMON |
JESD-30 code | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 |
memory density | 603979776 bit | 603979776 bit | 603979776 bi |
Memory IC Type | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
memory width | 72 | 72 | 72 |
Number of functions | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 |
Number of terminals | 168 | 168 | 168 |
word count | 8388608 words | 8388608 words | 8388608 words |
character code | 8000000 | 8000000 | 8000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C |
organize | 8MX72 | 8MX72 | 8MX72 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
encapsulated code | DIMM | DIMM | DIMM |
Encapsulate equivalent code | DIMM168 | DIMM168 | DIMM168 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
power supply | 3.3 V | 3.3 V | 3.3 V |
Certification status | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 4096 | 4096 | 4096 |
self refresh | YES | YES | YES |
Maximum standby current | 0.009 A | 0.009 A | 0.009 A |
Maximum slew rate | 1.35 mA | 1.35 mA | 1.35 mA |
Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V |
Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V |
Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V |
surface mount | NO | NO | NO |
technology | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD |
Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm |
Terminal location | DUAL | DUAL | DUAL |