UPA1750G-A datasheet, PDF - EEWORLD Datasheet

UPA1750G-A: DescriptionTRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.5A I(D),SO; CategoryDiscrete semiconductor The transistor; File Size1MB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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UPA1750G-A Overview

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.5A I(D),SO

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
package instruction	,
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	Single
Maximum drain current (Abs) (ID)	3.5 A
Maximum drain current (ID)	3.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Number of components	1
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	2 W
surface mount	YES

	UPA1750G-A	UPA1758G-A	UPA1750G
Description	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.5A I(D),SO	3.5A, 20V, 0.18ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.5A I(D),SO
Is it Rohs certified?	conform to	conform to	incompatible
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
Reach Compliance Code	unknow	unknown	unknown
Configuration	Single	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	Single
Maximum drain current (Abs) (ID)	3.5 A	6 A	3.5 A
Maximum drain current (ID)	3.5 A	3.5 A	3.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Number of components	1	2	1
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	2 W	1.7 W	2 W
surface mount	YES	YES	YES
ECCN code	EAR99	EAR99	-

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