UPA1758G-A datasheet, PDF - EEWORLD Datasheet

UPA1758G-A: Description3.5A, 20V, 0.18ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8; CategoryDiscrete semiconductor The transistor; File Size1MB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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UPA1758G-A Overview

3.5A, 20V, 0.18ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	6 A
Maximum drain current (ID)	3.5 A
Maximum drain-source on-resistance	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e6
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	1.7 W
Maximum pulsed drain current (IDM)	14 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Bismuth (Sn98Bi2)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	UPA1758G-A	UPA1750G	UPA1750G-A
Description	3.5A, 20V, 0.18ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, POWER, SOP-8	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.5A I(D),SO	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.5A I(D),SO
Is it Rohs certified?	conform to	incompatible	conform to
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
Reach Compliance Code	unknown	unknown	unknow
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	Single	Single
Maximum drain current (Abs) (ID)	6 A	3.5 A	3.5 A
Maximum drain current (ID)	3.5 A	3.5 A	3.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Number of components	2	1	1
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	1.7 W	2 W	2 W
surface mount	YES	YES	YES
ECCN code	EAR99	-	EAR99

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