KS524503HB datasheet, PDF - EEWORLD Datasheet

KS524503HB: DescriptionPower Bipolar Transistor, 30A I(C), 1-Element; CategoryDiscrete semiconductor The transistor; File Size157KB，2 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx

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KS524503HB Overview

Power Bipolar Transistor, 30A I(C), 1-Element

Parameter Name	Attribute value
Maker	POWEREX
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	30 A
Minimum DC current gain (hFE)	750
Maximum landing time (tf)	3000 ns
Number of components	1
Maximum operating temperature	150 °C
Maximum power dissipation(Abs)	250 W
Maximum rise time (tr)	2000 ns
VCEsat-Max	2.5 V

	KS524503HB	QM100DY24BK	QM150DY2HBK	KS621260HB
Description	Power Bipolar Transistor, 30A I(C), 1-Element	Power Bipolar Transistor, 100A I(C), 1-Element	Power Bipolar Transistor, 150A I(C), 1-Element	Power Bipolar Transistor, 600A I(C), 1-Element,
Reach Compliance Code	unknow	unknown	unknow	unknown
Maximum collector current (IC)	30 A	100 A	150 A	600 A
Minimum DC current gain (hFE)	750	750	750	750
Maximum landing time (tf)	3000 ns	3000 ns	3000 ns	3000 ns
Number of components	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Maximum power dissipation(Abs)	250 W	800 W	1000 W	3500 W
VCEsat-Max	2.5 V	4 V	4 V	4 V
Maker	POWEREX	POWEREX	POWEREX	-
ECCN code	EAR99	-	EAR99	EAR99

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