LP1019E datasheet, PDF - EEWORLD Datasheet

LP1019E: DescriptionVariable Capacitance Diode, Ultra High Frequency, 5.6pF C(T), 25V, Silicon, Abrupt; CategoryDiscrete semiconductor diode; File Size121KB，2 Pages; ManufacturerMsi Electronics Inc

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LP1019E Overview

Variable Capacitance Diode, Ultra High Frequency, 5.6pF C(T), 25V, Silicon, Abrupt

Parameter Name	Attribute value
Maker	Msi Electronics Inc
package instruction	O-CEMW-N2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW INDUCTANCE
Minimum breakdown voltage	25 V
Configuration	SINGLE
Minimum diode capacitance ratio	4.4
Nominal diode capacitance	5.6 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	ULTRA HIGH FREQUENCY
JESD-30 code	O-CEMW-N2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	MICROWAVE
Maximum power dissipation	5 W
Certification status	Not Qualified
minimum quality factor	800
Maximum repetitive peak reverse voltage	25 V
Maximum reverse current	2e-8 µA
Reverse test voltage	20 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Varactor Diode Classification	ABRUPT

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