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CJ7806FH

Description
Fixed Positive Standard Regulator
CategoryPower/power management    The power supply circuit   
File Size276KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Parametric View All

CJ7806FH Overview

Fixed Positive Standard Regulator

CJ7806FH Parametric

Parameter NameAttribute value
MakerJCET
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Regulator typeFIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR

CJ7806FH Preview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Voltage Regulators
CJ7806FH
Three-terminal positive voltage regulator
TO-220F
FEATURES
Maximum Output current I
OM
: 1.5 A
Output voltage V
o
: 6 V
Continuous total dissipation
is internally limited
1. IN
2. GND
3. OUT
ABSOLUTE MAXIMUM RATINGS (operating temperature range applies unless otherwise specified)
Parameter
Input Voltage
Thermal
Resistance from Junction to Ambient
Thermal
Resistance from Junction to Case
Operating Junction Temperature Range
Storage Temperature Range
Pa rameter
Output voltage
Symbol
Vo
Symbol
V
i
R
θJA
R
θJC
T
OPR
T
STG
Test conditions
25℃
8V≤V
i
≤21V,
Io=5mA-1A,
P≤15W
Io=5mA-1.5A
Io=250mA-750mA
8V≤V
i
≤25V
9V≤V
i
≤13V
0-125℃
25℃
25℃
25℃
25℃
25℃
8V≤V
i
≤25V
5mA≤I
O
≤1A
I
O
=5mA
10Hz≤f≤100kHz
9V≤V
i
≤19V,f=120Hz
Io=1A
f=1kHz
0-125℃
0-125℃
0-125℃
25℃
0-125℃
25℃
25℃
25℃
25℃
1
CJ7806FH
UTC
2
Ci
0.33μF
Co
0.1μF
3
Vo
59
Value
35
83.3
8.3
0~+150
-55~+150
Min
5.75
5.7
Typ
6
6
1.3
0.5
0.5
0.8
3.8
0.8
0.08
-0.8
45
75
2
10
550
2.2
Max
6.25
6.3
120
60
120
60
8
1.3
0.5
Unit
V
℃/W
℃/W
ELECTRICAL CHARACTERISTICS AT SPECIFIED VIRTUAL JUNCTION TEMPERATURE
(Vi=11V,Io=500mA,Ci=0.33μF, Co=0.1μF, unless otherwise specified )
Unit
V
V
mV
mV
mV
mV
mA
mA
mA
mV/℃
μV
dB
V
mΩ
mA
A
Load egulation
△Vo
Line regulation
Quiescent urrent
Quiescent urrent hange
Output voltage drift
Output oise oltage
Ripple ejection
Dropout oltage
Output resistance
Short ircuit urrent
Peak urrent
TYPICAL APPLICATION
△Vo
Iq
△Iq
△Vo/△T
V
N
RR
Vd
R
O
Isc
Ipk
Vi
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