INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
2SK260
DESCRIPTION
·Drain
Current
–I
D
=5A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 400V(Min)
·Fast
Switching Speed
APPLICATIONS
·Designed
especially for high voltage,high speed applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
400
±20
5
125
200
-65~200
UNIT
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.67
62.5
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
1
isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL
CHARACTERISTICS (T
C
=25℃)
SYMBOL
V
(BR)DSS
V
GS(TH)
R
DS(ON)
I
GSS
I
DSS
V
DS(ON)
ton
toff
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-stage Resistance
Gate Source Leakage Current
Zero Gate Voltage Drain Current
Drain-Source Saturation Voltage
Turn-on time
V
GS
=15V;I
D
=2A; R
L
=50Ω
Turn-off time
CONDITIONS
V
GS
=0; I
D
= 10mA
V
DS
= 10V
GS
; I
D
= 10mA
V
GS
= 15V; I
D
= 3A
V
GS
=
±20V;
V
DS
= 0
V
DS
=320V; V
GS
= 0
I
F
= 3A; V
GS
= 15V
7.5
25
140
MIN
400
0.4
2.5
TYP
2SK260
MAX
UNIT
V
3.0
3.0
±100
1
9.5
V
Ω
uA
mA
V
ns
ns
isc website：www.iscsemi.cn
2
isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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