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MUR1030CT

Description
Rectifier Diode, 10A, 300V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size145KB,2 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
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MUR1030CT Overview

Rectifier Diode, 10A, 300V V(RRM)

MUR1030CT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGood-Ark
Reach Compliance Codecompli
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current150 A
Maximum operating temperature150 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.05 µs
surface mountNO

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MUR1005CT thru MUR1040CT
Glass Passivated Super Fast Rectifiers
Reverse Voltage 50 to 400 Volts Forward Current 10.0 Amperes
Features
Low power loss, high efficiency
Low forward voltage, high current capability
High surge capacity
Super fast recovery times, high voltage
TO-220AB
Mechanical Data
Case: TO-220AB full molded plastic package
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked
Standard packaging: Any
Weight: 0.08 ounces, 2.24 grams
Maximum Ratings and Electrical Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified.
MUR
1005C T
50
35
50
MUR
1010C T
100
70
100
MUR
1015C T
150
105
150
10.0
150.0
0.95
10.0
500
35
62
3.0
-55 to +150
o
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=100
o
C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A per
element
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Typical junction capacitance at 4.0V, 1MHz
Typical thermal resistance
Operating junction and storage temperature range
@T
C
=25
o
C
@T
C
=100
o
C
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JC
T
J
, T
STG
MUR
1020C T
200
140
200
MUR
1030C T
300
210
300
MUR
1040C T
400
280
400
Unit
Volts
Volts
Volts
Amps
Amps
1.3
Volts
uA
50
nS
pF
C/W
o
C
Notes:
1. Pulse test: Pulse width 300
usec,
Duty cycle 2%
268
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