EEWORLDEEWORLDEEWORLD

Part Number

Search

PRN1112046R4F

Description
Array/Network Resistor, Bussed, Thin Film, 1W, 46.4ohm, 1% +/-Tol, -250,250ppm/Cel, 3415,
CategoryPassive components    The resistor   
File Size442KB,13 Pages
ManufacturerCalifornia Micro Devices
Download Datasheet Parametric View All

PRN1112046R4F Overview

Array/Network Resistor, Bussed, Thin Film, 1W, 46.4ohm, 1% +/-Tol, -250,250ppm/Cel, 3415,

PRN1112046R4F Parametric

Parameter NameAttribute value
MakerCalifornia Micro Devices
Reach Compliance Codeunknow
ECCN codeEAR99
structureMiniature
Network TypeBussed
Number of terminals20
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package height1.35 mm
Package length8.56 mm
Package formSMT
Package width3.81 mm
method of packingTR
Rated power dissipation(P)1 W
resistance46.4 Ω
Resistor typeARRAY/NETWORK RESISTOR
seriesPRN111(F TOL)NSTD
size code3415
technologyTHIN FILM
Temperature Coefficient-250,250 ppm/°C
Tolerance1%
351
%XVVHG 5HVLVWRU 1HWZRUN
)HDWXUHV
‡
‡
‡
‡
‡
6WDEOH WKLQ ILOP UHVLVWRU QHWZRUN
+LJK VSHHG WHUPLQDWLRQ QHWZRUN
    RU  WHUPLQDWLQJ OLQHVSDFNDJH
6DYHV ERDUG VSDFH UHGXFHV DVVHPEO\ FRVW
2IIHUHG LQ 62,& DQG 4623 SDFNDJHV
3URGXFW 'HVFULSWLRQ
&DOLIRUQLD 0LFUR 'HYLFHV¶ 351 %XVHG 5HVLVWRU
1HWZRUNV RIIHU KLJK LQWHJUDWLRQ DQG SHUIRUPDQFH LQ D
PLQLDWXUH 4623 RU 62,& SDFNDJH ZKLFK VDYHV FULWLFDO
ERDUG DUHD DQG SURYLGHV PDQXIDFWXULQJ FRVW DQG UHOL
DELOLW\ HIILFLHQFLHV 7KLV SDUW LV ZHOOVXLWHG DV D JHQHUDO
SXUSRVH UHSODFHPHQW IRU DOO SRSXODU GLVFUHWH UHVLVWRU
FKLSV DQG ODUJHU VL]H WKLFN ILOP WHFKQRORJ\ SDFNDJHV
:K\ WKLQ ILOP UHVLVWRU QHWZRUNV" $ WHUPLQDWLQJ UHVLVWRU
LV XVHG WR UHGXFH RU HOLPLQDWH XQZDQWHG UHIOHFWLRQV RQ
D WUDQVPLVVLRQ OLQH RU LQ VRPH FDVHV SURYLGH '& SXOO
XSSXOOGRZQ ,W FDQ SHUIRUP WKLV IXQFWLRQ RQO\ ZKHQ LWV
UHVLVWDQFH YDOXH LV FORVHO\ PDWFKHG WR WKH FKDUDFWHULV
WLF LPSHGDQFH RI WKH WUDQVPLVVLRQ OLQH 7KH UHVLVWRUV
XVHG IRU WHUPLQDWLQJ WUDQVPLVVLRQ OLQHV PXVW EH QRLVH
OHVV VWDEOH DQG IXQFWLRQDO DW KLJK IUHTXHQFLHV 8QOLNH
WKLQ ILOPEDVHG UHVLVWRU QHWZRUNV FRQYHQWLRQDO WKLFN
ILOP UHVLVWRUV XVHG IRU WKLV SXUSRVH DUH QRW VWDEOH RYHU
WHPSHUDWXUH DQG WLPH DQG PD\ KDYH IXQFWLRQDO OLPLWD
WLRQV ZKHQ XVHG LQ KLJK IUHTXHQF\ DSSOLFDWLRQV
O
bs
Pr o
od le
te
uc
t
$SSOLFDWLRQV

‡
‡
‡
‡
‡
3DUDOOHO WHUPLQDWLRQ
3XOO XS  3XOO GRZQ
'LJLWDO SXOVH VTXDULQJ
&RGLQJ DQG GHFRGLQJ
7HOHPHWU\
 5HIHU WR $3 7HUPLQDWLRQ $SSOLFDWLRQ 1RWH IRU
IXUWKHU LQIRUPDWLRQ RQ DSSOLFDWLRQV RI WKLV GHYLFH
(OHFWULFDO 6FKHPDWLF &RQILJXUDWLRQV
8
7
6
5
14
13
12
11
10
9
8
16
15
14
13
12
11
10
9
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R1
R
R
R
R1
R
R
R
R
R
R
R1
R
R
R
R
R
R
R
1
2
3
4
1
2
3
4
5
6
7
1
2
3
4
5
6
7
8
20
19
R
18
R
17
R
16
R
15
R
14
R
13
R
12
R
11
R
24
23
R
22
R
21
R
20
R
19
R
18
R
17
R
16
R
15
R
14
R
13
R
R1
R
R
R
R
R
R
R
R
R
R1
R
R
R
R
R
R
R
R
R
R
R
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
11
12
‹
2002 California Micro Devices Corp. All rights reserved.
1/14/02
C0160997D
215 Topaz Street, Milpitas, California 95035
L
Tel: (408) 263-3214
L
Fax: (408) 263-7846
L
www.calmicro.com
1
Let’s talk about the advantages of GaN in the RF field
Gallium nitride is becoming more and more popular in the field of radio frequency, and its role is becoming more and more important, mainly because of its advantages in the field of radio frequency. L...
alan000345 RF/Wirelessly
Classification and circuit composition of power amplifiers
Classification of power amplifiers  Class A working state: The collector current of the transistor is always flowing during the entire working cycle, and the amplifier has the lowest efficiency, resul...
fish001 Analogue and Mixed Signal
Can you guys help me analyze this ultrasonic receiving circuit? Is the op amp a bandpass filter? How do I calculate the center frequency?
Can you guys help me analyze this ultrasonic receiving circuit? Is the op amp a bandpass filter? How do I calculate the center frequency?...
拯救小p孩 Analog electronics
Understanding automotive RF front-end design techniques in one article
In the past, cars were just a simple mode of transportation. However, now they can achieve a certain degree of autonomous driving, network communication and entertainment services. In order to enable ...
alan000345 RF/Wirelessly
TI launches high-speed CAN transceiver
Texas Instruments (TI) has announced a controller area network (CAN) transceiver with industry-leading electrostatic discharge (ESD) protection up to +/- 8 kV (Human Body Model). This powerful device ...
frozenviolet Automotive Electronics
Review Weekly Report 20220104: New arrivals~ Linux RISC-V development kit, National Technology M4 hot-selling model, fresh ST60
This week's review highlights: - 4 activities are online: Pingtou Ge's RISC-V development kit supporting Linux (worth 440), the popular model of the National Technology M4 core, experience the fresh p...
EEWORLD社区 Special Edition for Assessment Centres

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号