AZ23-V-Series
Vishay Semiconductors
Small Signal Zener Diodes, Dual
Features
• These diodes are also available in other
case styles and configurations including:
the dual diode common cathode configu-
e3
ration with type designation DZ23, the sin-
gle diode SOT23 case with the type designation
BZX84C, and the single diode
SOD123 case with the type designation BZT52C.
• Dual Silicon Planar Zener Diodes, Common
Anode
• The Zener voltages are graded according to the
international E 24 standard
• The parameters are valid for both diodes in one
case.
ΔV
Z
and
Δr
zj
of the two diodes in one case is
≤
5%
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
1
2
18070
Mechanical Data
Case:
SOT23 Plastic case
Weight:
approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel, (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel, (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
1)
Test condition
Symbol
P
tot
Value
300
1)
Unit
mW
Device on fiberglass substrate, see layout on page 6
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
stg
Value
420
1)
150
- 65 to + 150
Unit
K/W
°C
°C
Device on fiberglass substrate, see layout on page 6
Document Number 85759
Rev. 1.5, 24-Mar-06
www.vishay.com
1
AZ23-V-Series
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
mA
10
3
10
2
Ω
10
3
5
4
3
2
r
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
I
F
10
1
10
-1
10
-2
T
J
= 100 °C
r
zth
10
2
5
4
3
2
T
J
= 25 °C
10
10
-3
10
-4
10
-5
0
18114
5
4
3
2
negative
positive
1
0.2
0.4
0.6
0.8
1V
1
18121
2
3
4 5
10
2
3 4 5
100
V
V
F
Figure 1. Forward characteristics
V
Z
at I
Z
= 5 mA
Figure 4. Thermal Differential Resistance vs. Zener Voltage
mW
500
Ω
100
7
5
4
400
P
tot
300
r
zj
3
2
10
200
7
5
4
3
100
2
0
0
18115
1
100
200 °C
1
18122
2
3
4 5
T
j
= 25 °C
I
Z
= 5 mA
10
2
3 4 5
100
V
T
amb
V
Z
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Dynamic Resistance vs. Zener Voltage
Ω
10
3
7
5
4
T
j
= 25 °C
mV/°C
25
20
I
Z
=
r
zj
3
2
47 + 51
43
39
36
Δ
V
Z
Δ
T
j
15
10
5
0
-5
5 mA
1 mA
20 mA
10
2
7
5
4
3
2
10
0.1
18120
2
3
4 5
1
2
3 4 5
10 mA
1
18123
2
3
4 5
10
2
3 4 5
100
V
I
Z
V
Z
Figure 3. Dynamic Resistance vs. Zener Current
Figure 6. Temperature Dependence of Zener Voltage vs. Zener
Voltage
www.vishay.com
4
Document Number 85759
Rev. 1.5, 24-Mar-06
AZ23-V-Series
Vishay Semiconductors
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
15
10
V
1.6
1.4
1.2
Δ
V
Z
= r
zth
x I
Z
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
20
40
60
80
100 120 140 C
18127
1
2
3
4 5
10
2
3 4 5
100
V
T
j
V
Z
at I
Z
= 5 mA
Figure 10. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
V
5
Figure 7. Change of Zener Voltage vs. Junction Temperature
mV/°C
100
I
Z
= 5 mA
Δ
V
Z
= r
zth
x I
Z
Δ
V
Z
Δ
T
j
80
4
Δ
V
Z
60
3
I
Z
= 5 mA
40
2
20
1
I
Z
= 2 mA
0
0
18125
0
20
40
60
80
100
V
0
18128
20
40
60
80
100
V
V
Z
V
Z
Figure 8. Temperature Dependence of Zener Voltage vs. Zener
Voltage
V
9
8
7
Figure 11. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
mA
50
T
j
= 25 °C
2.7
3.3
3.9
4.7
5.6
6.8
8.2
40
51
43
36
Δ
V
Z
6
5
4
3
2
1
0
-1
0
18126
l
z
30
20
Test Current I
Z
5 mA
10
I
Z
= 2 mA
0
0
18111
20
40
60
80
100 120
140 °C
1
2
3
4
5
6
7
8
9
10
V
T
j
V
Z
Figure 9. Change of Zener Voltage vs. Junction Temperature
Figure 12. Breakdown Characteristics
Document Number 85759
Rev. 1.5, 24-Mar-06
www.vishay.com
5
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