AP2310CGN-HF datasheet, PDF - EEWORLD Datasheet

AP2310CGN-HF: DescriptionSimple Drive Requirement, Small Package Outline, Surface Mount Device; CategoryDiscrete semiconductor The transistor; File Size91KB，4 Pages; ManufacturerAPEC

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AP2310CGN-HF Overview

Simple Drive Requirement, Small Package Outline, Surface Mount Device

Parameter Name	Attribute value
Maker	APEC
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	3.2 A
Maximum drain-source on-resistance	0.075 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	12 A
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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