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AP1001BSQ

Description
Lead-Free Package, Low Conductance Loss
CategoryDiscrete semiconductor    The transistor   
File Size101KB,4 Pages
ManufacturerAPEC
Environmental Compliance
Download Datasheet Parametric View All

AP1001BSQ Overview

Lead-Free Package, Low Conductance Loss

AP1001BSQ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAPEC
package instructionCHIP CARRIER, R-XBCC-N2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)28.8 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (Abs) (ID)15 A
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.006 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XBCC-N2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)34 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
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