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HY5DU121622CF-J

Description
DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60
Categorystorage    storage   
File Size393KB,31 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
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HY5DU121622CF-J Overview

DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60

HY5DU121622CF-J Parametric

Parameter NameAttribute value
MakerSK Hynix
package instructionBGA, BGA60,9X12,40/32
Reach Compliance Codecompli
Maximum access time0.7 ns
Maximum clock frequency (fCLK)167 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PBGA-B60
memory density536870912 bi
Memory IC TypeDDR DRAM
memory width16
Number of terminals60
word count33554432 words
character code32000000
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA60,9X12,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length2,4,8
Maximum standby current0.01 A
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM

HY5DU121622CF-J Related Products

HY5DU121622CF-J HY5DU121622CF-D43 HY5DU121622CF-H HY5DU121622CF-K HY5DU121622CLF-H HY5DU121622CLF-K HY5DU12822CF-D43 HY5DU12822CF-L
Description DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60 DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60 DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60 DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60 DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60 DDR DRAM, 64MX8, 0.75ns, CMOS, PBGA60
package instruction BGA, BGA60,9X12,40/32 BGA, BGA60,9X12,40/32 BGA, BGA60,9X12,40/32 BGA, BGA60,9X12,40/32 BGA, BGA60,9X12,40/32 BGA, BGA60,9X12,40/32 BGA, BGA60,9X12,40/32 BGA, BGA60,9X12,40/32
Reach Compliance Code compli compli compli compli compli compli compliant compliant
Maximum access time 0.7 ns 0.7 ns 0.75 ns 0.75 ns 0.75 ns 0.75 ns 0.7 ns 0.75 ns
Maximum clock frequency (fCLK) 167 MHz 200 MHz 133 MHz 133 MHz 133 MHz 133 MHz 200 MHz 125 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
interleaved burst length 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8
JESD-30 code R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60 R-PBGA-B60
memory density 536870912 bi 536870912 bi 536870912 bi 536870912 bi 536870912 bi 536870912 bi 536870912 bit 536870912 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 16 16 16 16 16 16 8 8
Number of terminals 60 60 60 60 60 60 60 60
word count 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 33554432 words 67108864 words 67108864 words
character code 32000000 32000000 32000000 32000000 32000000 32000000 64000000 64000000
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 32MX16 32MX16 32MX16 32MX16 32MX16 32MX16 64MX8 64MX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code BGA BGA BGA BGA BGA BGA BGA BGA
Encapsulate equivalent code BGA60,9X12,40/32 BGA60,9X12,40/32 BGA60,9X12,40/32 BGA60,9X12,40/32 BGA60,9X12,40/32 BGA60,9X12,40/32 BGA60,9X12,40/32 BGA60,9X12,40/32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
power supply 2.5 V 2.6 V 2.5 V 2.5 V 2.5 V 2.5 V 2.6 V 2.5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192 8192 8192 8192
Continuous burst length 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8
Maximum standby current 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A 0.01 A
Nominal supply voltage (Vsup) 2.5 V 2.6 V 2.5 V 2.5 V 2.5 V 2.5 V 2.6 V 2.5 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maker SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix - -
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