HY5DU121622CF-H datasheet, PDF

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HY5DU121622CF-H: DescriptionDDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60; Categorystorage storage; File Size393KB，31 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY5DU121622CF-H Overview

DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60

HY5DU121622CF-H Parametric

Parameter Name	Attribute value
Maker	SK Hynix
package instruction	BGA, BGA60,9X12,40/32
Reach Compliance Code	compli
Maximum access time	0.75 ns
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
memory density	536870912 bi
Memory IC Type	DDR DRAM
memory width	16
Number of terminals	60
word count	33554432 words
character code	32000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	2,4,8
Maximum standby current	0.01 A
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

HY5DU121622CF-H Related Products

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Description	DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60	DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60	DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60	DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60	DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60	DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60	DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60	DDR DRAM, 64MX8, 0.75ns, CMOS, PBGA60
package instruction	BGA, BGA60,9X12,40/32	BGA, BGA60,9X12,40/32	BGA, BGA60,9X12,40/32	BGA, BGA60,9X12,40/32	BGA, BGA60,9X12,40/32	BGA, BGA60,9X12,40/32	BGA, BGA60,9X12,40/32	BGA, BGA60,9X12,40/32
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compliant	compliant
Maximum access time	0.75 ns	0.7 ns	0.7 ns	0.75 ns	0.75 ns	0.75 ns	0.7 ns	0.75 ns
Maximum clock frequency (fCLK)	133 MHz	200 MHz	167 MHz	133 MHz	133 MHz	133 MHz	200 MHz	125 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
JESD-30 code	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60
memory density	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bit	536870912 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	16	16	16	16	16	8	8
Number of terminals	60	60	60	60	60	60	60	60
word count	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	67108864 words	67108864 words
character code	32000000	32000000	32000000	32000000	32000000	32000000	64000000	64000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32MX16	32MX16	32MX16	32MX16	32MX16	32MX16	64MX8	64MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
Encapsulate equivalent code	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32	BGA60,9X12,40/32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY
power supply	2.5 V	2.6 V	2.5 V	2.5 V	2.5 V	2.5 V	2.6 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192
Continuous burst length	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
Maximum standby current	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A
Nominal supply voltage (Vsup)	2.5 V	2.6 V	2.5 V	2.5 V	2.5 V	2.5 V	2.6 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	-	-

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