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ISL55110IVZ-T13

Description
HALF BRDG BASED MOSFET DRIVER
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size452KB,18 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

ISL55110IVZ-T13 Overview

HALF BRDG BASED MOSFET DRIVER

ISL55110IVZ-T13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instruction,
Reach Compliance Codecompli
Interface integrated circuit typeHALF BRIDGE BASED MOSFET DRIVER
JESD-609 codee3
Humidity sensitivity level1
Terminal surfaceMatte Tin (Sn) - annealed
Dual, High Speed MOSFET Driver
ISL55110, ISL55111
The ISL55110 and ISL55111 are dual high speed MOSFET
drivers intended for applications requiring accurate pulse
generation and buffering. Target applications include
ultrasound, CCD imaging, automotive piezoelectric distance
sensing and clock generation circuits.
With a wide output voltage range and low ON-resistance, these
devices can drive a variety of resistive and capacitive loads
with fast rise and fall times, allowing high speed operation
with low skew, as required in large CCD array imaging
applications.
The ISL55110 and ISL55111 are compatible with 3.3V and 5V
logic families and incorporate tightly controlled input
thresholds to minimize the effect of input rise time on output
pulse width. The ISL55110 has a pair of in-phase drivers while
the ISL55111 has two drivers operating in antiphase.
The ISL55110 has a power-down mode for low power
consumption during equipment standby times, making it ideal
for portable products.
The ISL55110 and ISL55111 are available in 16 Ld Exposed
pad QFN packaging and 8 Ld TSSOP. Both devices are
specified for operation over the full -40°C to +85°C
temperature range.
Features
• 5V to 12V Pulse Magnitude
• High Current Drive 3.5A
• 6ns Minimum Pulse Width
• 1.5ns Rise and Fall Times, 100pF Load
• Low Skew
• 3.3V and 5V Logic Compatible
• In-Phase and Anti-Phase Outputs
• Small QFN and TSSOP Packaging
• Low Quiescent Current
• Pb-Free (RoHS Compliant)
Applications
• Ultrasound MOSFET Driver
• CCD Array Horizontal Driver
• Automotive Piezo Driver Applications
• Clock Driver Circuits
Functional Block Diagram
ISL55110 AND ISL55111 DUAL DRIVER
o
VDD
VH
o
o
IN-A
OA
o
o
HIZ-QFN*
o
IN-B
*
OB
o
GND
o
POWER DOWN
o
*HIZ AVAILABLE IN QFN PACKAGE ONLY
*ISL55111 IN-B IS INVERTING
August 8, 2013
FN6228.6
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas LLC 2006-2008, 2011-2013. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.

ISL55110IVZ-T13 Related Products

ISL55110IVZ-T13 ISL55110IRZ-T7 ISL55110IVZ-T7
Description HALF BRDG BASED MOSFET DRIVER HALF BRDG BASED MOSFET DRIVER HALF BRDG BASED MOSFET DRIVER
Is it Rohs certified? conform to conform to conform to
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code compli compli compli
Interface integrated circuit type HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Terminal surface Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
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