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PU3146

Description
Power Bipolar Transistor, 3A I(C), 85V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin
CategoryDiscrete semiconductor    The transistor   
File Size167KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

PU3146 Overview

Power Bipolar Transistor, 3A I(C), 85V V(BR)CEO, 3-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin

PU3146 Parametric

Parameter NameAttribute value
MakerPanasonic
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage85 V
ConfigurationCOMPLEX
Minimum DC current gain (hFE)1000
JESD-30 codeR-PSIP-T8
Number of components3
Number of terminals8
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
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