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GC1756CCHIP

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 2.7pF C(T), 60V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size116KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

GC1756CCHIP Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 2.7pF C(T), 60V, Silicon, Abrupt

GC1756CCHIP Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionX-XUUC-N
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH VOLTAGE, HIGH Q
Minimum breakdown voltage60 V
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio5
Nominal diode capacitance2.7 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeX-XUUC-N
Number of components1
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Certification statusNot Qualified
minimum quality factor1200
Maximum repetitive peak reverse voltage60 V
Maximum reverse current2e-8 µA
Reverse test voltage55 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT
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