DGS 10-015A
DGS 10-018A
DGSK 20-015A
DGSK 20-018A
Gallium Arsenide Schottky Rectifier
Preliminary Data
V
RSM
V
150
180
V
RSM
V
150
180
V
RRM
V
150
180
V
RRM
V
150
180
DGSK 20-015A
DGSK 20-018A
Common cathode
I
FAV
= 15 A
V
RRM
= 150/180 V
C
Junction
= 22 pF
Type
DGS 10-015A
DGS 10-018A
Type
A
C
Single
TO-220 AC
C
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
A
C
A
TO-220 AB
A
C
A
C (TAB)
Symbol
I
FAV
I
FAV
I
FSM
T
VJ
T
stg
P
tot
M
d
Conditions
T
C
= 25°C; DC
T
C
= 90°C; DC
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
Maximum Ratings
15
11
20
-55...+175
-55...+150
A
A
A
°C
°C
W
Nm
T
C
= 25°C
mounting torque
34
0.4...0.6
Features
Low forward voltage
Very high switching speed
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
High temperature operation capability
Epoxy meets UL 94V-0
q
q
q
q
q
q
q
Applications
MHz Switched mode power supplies
q
(SMPs)
q
q
q
Small size SMPs
High frequency converters
Resonant converters
Symbol
I
R
V
F
C
J
R
thJC
R
thCH
Weight
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 125°C V
R
= V
RRM
I
F
= 5 A;
I
F
= 5 A;
T
VJ
= 125°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
1.3
1.3
0.8
0.8
22
4.4
0.5
2
1.1
mA
mA
V
V
pF
K/W
K/W
g
V
R
= 100 V; T
VJ
= 125°C
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
119
IXYS reserves the right to change limits, Conditions and dimensions.
© 2001 IXYS All rights reserved
1-2
DGS 10-015A
DGS 10-018A
20
10
A
I
F
1
T
VJ
=
125°C
25°C
DGSK 20-015A
DGSK 20-018A
300
pF
C
J
100
0.1
T
VJ
= 125°C
0.01
0.0
0.5
1.0
1.5
V
F
V 2.0
10
0.1
1
10
100 V 1000
V
R
Fig. 1 typ. forward characteristics
Fig. 2 typ. junction capacity
versus blocking voltage
Outline
(center pin only for DGSK types)
10
K/W
Single Pulse
1
Z
thJC
0.1
0.01
DGS10-015/018BS
0.00001
0.0001
0.001
0.01
0.1
1
t
s
10
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium
Arsenide Schottky diodes:
Rectifier Diode
conduction
by majority + minority carriers
forward characteristics V
F
(I
F
)
turn off characteristics extraction of excess carriers
causes temperature dependant
reverse recovery (t
rr
, I
RM
, Q
rr
)
turn on characteristics delayed saturation leads to V
FR
GaAs Schottky Diode
by majority carriers only
V
F
(I
F
), see Fig. 1
reverse current charges
junction capacity C
J
, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
Millimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.38
0.56
2.29
2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
© 2001 IXYS All rights reserved
2-2
119