MMBT3640/L99Z datasheet, PDF - EEWORLD Datasheet

MMBT3640/L99Z: Description200mA, 12V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size55KB，2 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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MMBT3640/L99Z Overview

200mA, 12V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

Parameter Name	Attribute value
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.2 A
Collector-based maximum capacity	3.5 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power consumption environment	0.225 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	500 MHz
Maximum off time (toff)	75 ns
Maximum opening time (tons)	60 ns
VCEsat-Max	0.6 V

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