MCM62974FN18 datasheet, PDF - EEWORLD Datasheet

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MCM62974FN18: DescriptionCache SRAM, 4KX12, 10ns, CMOS, PQCC44, PLASTIC, LCC-44; Categorystorage storage; File Size259KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MCM62974FN18 Overview

Cache SRAM, 4KX12, 10ns, CMOS, PQCC44, PLASTIC, LCC-44

MCM62974FN18 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	QCCJ, LDCC44,.7SQ
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	10 ns
I/O type	SEPARATE
JESD-30 code	S-PQCC-J44
JESD-609 code	e0
length	16.5862 mm
memory density	49152 bi
Memory IC Type	CACHE SRAM
memory width	12
Number of functions	1
Number of ports	1
Number of terminals	44
word count	4096 words
character code	4000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4KX12
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC44,.7SQ
Package shape	SQUARE
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.57 mm
Maximum standby current	0.18 A
Minimum standby current	4.5 V
Maximum slew rate	0.18 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	16.5862 mm

MCM62974FN18 Related Products

	MCM62974FN18	MCM62974FN20	MCM62974FN25
Description	Cache SRAM, 4KX12, 10ns, CMOS, PQCC44, PLASTIC, LCC-44	Cache SRAM, 4KX12, 10ns, CMOS, PQCC44, PLASTIC, LCC-44	Cache SRAM, 4KX12, 10ns, CMOS, PQCC44, PLASTIC, LCC-44
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	QCCJ, LDCC44,.7SQ	QCCJ, LDCC44,.7SQ	QCCJ, LDCC44,.7SQ
Reach Compliance Code	unknow	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum access time	10 ns	10 ns	10 ns
I/O type	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	S-PQCC-J44	S-PQCC-J44	S-PQCC-J44
JESD-609 code	e0	e0	e0
length	16.5862 mm	16.5862 mm	16.5862 mm
memory density	49152 bi	49152 bit	49152 bit
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	12	12	12
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	44	44	44
word count	4096 words	4096 words	4096 words
character code	4000	4000	4000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	4KX12	4KX12	4KX12
Output characteristics	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QCCJ	QCCJ	QCCJ
Encapsulate equivalent code	LDCC44,.7SQ	LDCC44,.7SQ	LDCC44,.7SQ
Package shape	SQUARE	SQUARE	SQUARE
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.57 mm	4.57 mm	4.57 mm
Maximum standby current	0.18 A	0.17 A	0.17 A
Minimum standby current	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.18 mA	0.17 mA	0.17 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	J BEND	J BEND
Terminal pitch	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	16.5862 mm	16.5862 mm	16.5862 mm

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