Variable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 12V, Silicon
| Parameter Name | Attribute value |
| Maker | Msi Electronics Inc |
| package instruction | R-PDSO-L2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | 3% MATCHED SET OF FOUR DIODES |
| Minimum breakdown voltage | 12 V |
| Configuration | SEPARATE, 4 ELEMENTS |
| Minimum diode capacitance ratio | 7 |
| Nominal diode capacitance | 33 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| JESD-30 code | R-PDSO-L2 |
| Number of components | 4 |
| Number of terminals | 2 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Certification status | Not Qualified |
| minimum quality factor | 125 |
| Maximum reverse current | 0.01 µA |
| Reverse test voltage | 10 V |
| surface mount | YES |
| Terminal form | L BEND |
| Terminal location | DUAL |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
