EEWORLDEEWORLDEEWORLD

Part Number

Search

EC3H08B

Description
High-Frequency Amp Applications, Osc. Applications
File Size18KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet View All

EC3H08B Overview

High-Frequency Amp Applications, Osc. Applications

Ordering number : 0000000
EC3H08B
NPN Epitaxial Planar Silicon Transistor
EC3H08B
High-Frequency
Amp Applications, Osc. Applications
Preliminary
Features
Package Dimensions
0.65
0.05
Low noise : NF=1.6dB typ (f=2GHz).
unit : mm
High cut-off frequency : fT=10.0GHz typ (VCE=1V).
0000
: fT=12.0GHz typ (VCE=3V).
Low operating voltage.
High Gain :
S21e
2
=9.5dB typ (f=2GHz)
Ultraminiature (1006 size) and thin (0.5mm) leadless
package.
0.35
0.2
0.15
0.05
1
0.4
[EC3H08B]
0.15
2
1.0
0.25
3
0.5
(Bottom view)
0.25
0.05
0.05
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
0.6
1 : Base
2 : Emitter
3 : Collector
SANYO : ECSP1006
Ratings
9
4
2
20
80
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT(1)
fT(2)
Cob
Cre
S21e
2
(1)
S21e
2
(2)
NF
VCB=5V, IE=0
VEB=1V, IC=0
VCE=1V, IC=5mA
VCE=1V, IC=3mA
VCE=3V, IC=7mA
VCB=1V, f=1MHz
VCB=1V, f=1MHz
VCE=1V, IC=3mA, f=2GHz
VCE=3V, IC=7mA, f=2GHz
VCE=1V, IC=3mA, f=2GHz
100
8.0
10.0
10.0
12.0
0.4
0.27
8.0
9.0
9.5
10.5
1.6
2.5
0.55
0.40
Conditions
Ratings
min
typ
max
1.0
10
160
GHz
GHz
pF
pF
dB
dB
dB
Unit
µA
µA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
HD Seigi 011023 matumiya-1/2
0.5

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号