2SA812P datasheet, PDF - EEWORLD Datasheet

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2SA812P: DescriptionTRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size75KB，2 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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2SA812P Overview

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

2SA812P Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	unknow
Base Number Matches	1

2SA812P Related Products

	2SA812P	2SA812M5	2SA812M6	2SA812M7	2SA812-TP	2SA812M4	2SA812
Description	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Small Signal	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible	conform to	incompatible	incompatible
package instruction	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	unknow	compli	compli	compli	compli	compliant	compli
Base Number Matches	1	1	1	1	1	1	-
Parts packaging code	-	SOT-23	SOT-23	SOT-23	-	SOT-23	-
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	-	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	-	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	135	200	300	90	90	90
JESD-30 code	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	-	e0	e0	e0	e3	e0	e0
Number of components	-	1	1	1	1	1	1
Number of terminals	-	3	3	3	3	3	3
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	240	240	240	260	240	240
Polarity/channel type	-	NPN	NPN	NPN	PNP	NPN	PNP
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	-	YES	YES	YES	YES	YES	YES
Terminal surface	-	Tin/Lead (Sn/Pb)	TIN LEAD	TIN LEAD	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	TIN LEAD
Terminal form	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	-	30	30	30	10	30	30
transistor applications	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	AMPLIFIER
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	-	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz

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