ZBT SRAM, 1MX18, 3.5ns, CMOS, PBGA119
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | SAMSUNG |
package instruction | BGA, BGA119,7X17,50 |
Reach Compliance Code | unknown |
Maximum access time | 3.5 ns |
I/O type | COMMON |
JESD-30 code | R-PBGA-B119 |
JESD-609 code | e0 |
memory density | 18874368 bit |
Memory IC Type | ZBT SRAM |
memory width | 18 |
Humidity sensitivity level | 3 |
Number of terminals | 119 |
word count | 1048576 words |
character code | 1000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 1MX18 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | BGA |
Encapsulate equivalent code | BGA119,7X17,50 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 2.5 V |
Certification status | Not Qualified |
Maximum standby current | 0.01 A |
Minimum standby current | 2.38 V |
Maximum slew rate | 0.32 mA |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | BALL |
Terminal pitch | 1.27 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 40 |
K7N161845M-HC16T | K7N163645M-HC15T | K7N161845M-HC13T | K7N161845M-QC13T | K7N161845M-QC16T | K7N163645M-QC15T | K7N163645M-HC13T | K7N161845M-HC15T | K7N163645M-QC16T | |
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Description | ZBT SRAM, 1MX18, 3.5ns, CMOS, PBGA119 | ZBT SRAM, 512KX36, 3.8ns, CMOS, PBGA119 | ZBT SRAM, 1MX18, 4.2ns, CMOS, PBGA119 | ZBT SRAM, 1MX18, 4.2ns, CMOS, PQFP100 | ZBT SRAM, 1MX18, 3.5ns, CMOS, PQFP100 | ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100 | ZBT SRAM, 512KX36, 4.2ns, CMOS, PBGA119 | ZBT SRAM, 1MX18, 3.8ns, CMOS, PBGA119 | ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100 |
Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
package instruction | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 | QFP, QFP100,.63X.87 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | QFP, QFP100,.63X.87 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
Maximum access time | 3.5 ns | 3.8 ns | 4.2 ns | 4.2 ns | 3.5 ns | 3.8 ns | 4.2 ns | 3.8 ns | 3.5 ns |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PBGA-B119 | R-PBGA-B119 | R-PQFP-G100 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
memory density | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bi |
Memory IC Type | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM |
memory width | 18 | 36 | 18 | 18 | 18 | 36 | 36 | 18 | 36 |
Humidity sensitivity level | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Number of terminals | 119 | 119 | 119 | 100 | 100 | 100 | 119 | 119 | 100 |
word count | 1048576 words | 524288 words | 1048576 words | 1048576 words | 1048576 words | 524288 words | 524288 words | 1048576 words | 524288 words |
character code | 1000000 | 512000 | 1000000 | 1000000 | 1000000 | 512000 | 512000 | 1000000 | 512000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 1MX18 | 512KX36 | 1MX18 | 1MX18 | 1MX18 | 512KX36 | 512KX36 | 1MX18 | 512KX36 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | BGA | BGA | BGA | QFP | QFP | QFP | BGA | BGA | QFP |
Encapsulate equivalent code | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | BGA119,7X17,50 | BGA119,7X17,50 | QFP100,.63X.87 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | GRID ARRAY | GRID ARRAY | GRID ARRAY | FLATPACK | FLATPACK | FLATPACK | GRID ARRAY | GRID ARRAY | FLATPACK |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
power supply | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum standby current | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
Minimum standby current | 2.38 V | 2.38 V | 2.38 V | 2.38 V | 2.38 V | 2.38 V | 2.38 V | 2.38 V | 2.38 V |
Maximum slew rate | 0.32 mA | 0.3 mA | 0.28 mA | 0.28 mA | 0.32 mA | 0.3 mA | 0.28 mA | 0.3 mA | 0.32 mA |
Nominal supply voltage (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | BALL | BALL | BALL | GULL WING | GULL WING | GULL WING | BALL | BALL | GULL WING |
Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 0.635 mm | 0.635 mm | 0.635 mm | 1.27 mm | 1.27 mm | 0.635 mm |
Terminal location | BOTTOM | BOTTOM | BOTTOM | QUAD | QUAD | QUAD | BOTTOM | BOTTOM | QUAD |
Maximum time at peak reflow temperature | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
Maker | SAMSUNG | SAMSUNG | SAMSUNG | - | - | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |