K7N163645M-HC15T datasheet, PDF

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K7N163645M-HC15T: DescriptionZBT SRAM, 512KX36, 3.8ns, CMOS, PBGA119; Categorystorage; File Size356KB，20 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K7N163645M-HC15T Overview

ZBT SRAM, 512KX36, 3.8ns, CMOS, PBGA119

K7N163645M-HC15T Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	BGA, BGA119,7X17,50
Reach Compliance Code	unknown
Is Samacsys	N
Maximum access time	3.8 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B119
JESD-609 code	e0
memory density	18874368 bit
Memory IC Type	ZBT SRAM
memory width	36
Humidity sensitivity level	3
Number of terminals	119
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA119,7X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	2.5 V
Certification status	Not Qualified
Maximum standby current	0.01 A
Minimum standby current	2.38 V
Maximum slew rate	0.3 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
Base Number Matches	1

K7N163645M-HC15T Related Products

	K7N163645M-HC15T	K7N161845M-HC13T	K7N161845M-QC13T	K7N161845M-QC16T	K7N163645M-QC15T	K7N163645M-HC13T	K7N161845M-HC15T	K7N161845M-HC16T	K7N163645M-QC16T
Description	ZBT SRAM, 512KX36, 3.8ns, CMOS, PBGA119	ZBT SRAM, 1MX18, 4.2ns, CMOS, PBGA119	ZBT SRAM, 1MX18, 4.2ns, CMOS, PQFP100	ZBT SRAM, 1MX18, 3.5ns, CMOS, PQFP100	ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100	ZBT SRAM, 512KX36, 4.2ns, CMOS, PBGA119	ZBT SRAM, 1MX18, 3.8ns, CMOS, PBGA119	ZBT SRAM, 1MX18, 3.5ns, CMOS, PBGA119	ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	QFP, QFP100,.63X.87
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
Maximum access time	3.8 ns	4.2 ns	4.2 ns	3.5 ns	3.8 ns	4.2 ns	3.8 ns	3.5 ns	3.5 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B119	R-PBGA-B119	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119	R-PQFP-G100
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bi
Memory IC Type	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
memory width	36	18	18	18	36	36	18	18	36
Humidity sensitivity level	3	3	3	3	3	3	3	3	3
Number of terminals	119	119	100	100	100	119	119	119	100
word count	524288 words	1048576 words	1048576 words	1048576 words	524288 words	524288 words	1048576 words	1048576 words	524288 words
character code	512000	1000000	1000000	1000000	512000	512000	1000000	1000000	512000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	512KX36	1MX18	1MX18	1MX18	512KX36	512KX36	1MX18	1MX18	512KX36
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	BGA	QFP	QFP	QFP	BGA	BGA	BGA	QFP
Encapsulate equivalent code	BGA119,7X17,50	BGA119,7X17,50	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50	QFP100,.63X.87
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY	FLATPACK	FLATPACK	FLATPACK	GRID ARRAY	GRID ARRAY	GRID ARRAY	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260	260
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A
Minimum standby current	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V
Maximum slew rate	0.3 mA	0.28 mA	0.28 mA	0.32 mA	0.3 mA	0.28 mA	0.3 mA	0.32 mA	0.32 mA
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	BALL	BALL	GULL WING	GULL WING	GULL WING	BALL	BALL	BALL	GULL WING
Terminal pitch	1.27 mm	1.27 mm	0.635 mm	0.635 mm	0.635 mm	1.27 mm	1.27 mm	1.27 mm	0.635 mm
Terminal location	BOTTOM	BOTTOM	QUAD	QUAD	QUAD	BOTTOM	BOTTOM	BOTTOM	QUAD
Maximum time at peak reflow temperature	40	40	40	40	40	40	40	40	40
Maker	SAMSUNG	SAMSUNG	-	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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