K7N163645M-QC16T datasheet, PDF

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K7N163645M-QC16T: DescriptionZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100; Categorystorage storage; File Size356KB，20 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K7N163645M-QC16T Overview

ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100

K7N163645M-QC16T Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	QFP, QFP100,.63X.87
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	3.5 ns
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
memory density	18874368 bi
Memory IC Type	ZBT SRAM
memory width	36
Humidity sensitivity level	3
Number of terminals	100
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	2.5 V
Certification status	Not Qualified
Maximum standby current	0.01 A
Minimum standby current	2.38 V
Maximum slew rate	0.32 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	40

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	K7N163645M-QC16T	K7N163645M-HC15T	K7N161845M-HC13T	K7N161845M-QC13T	K7N161845M-QC16T	K7N163645M-QC15T	K7N163645M-HC13T	K7N161845M-HC15T	K7N161845M-HC16T
Description	ZBT SRAM, 512KX36, 3.5ns, CMOS, PQFP100	ZBT SRAM, 512KX36, 3.8ns, CMOS, PBGA119	ZBT SRAM, 1MX18, 4.2ns, CMOS, PBGA119	ZBT SRAM, 1MX18, 4.2ns, CMOS, PQFP100	ZBT SRAM, 1MX18, 3.5ns, CMOS, PQFP100	ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100	ZBT SRAM, 512KX36, 4.2ns, CMOS, PBGA119	ZBT SRAM, 1MX18, 3.8ns, CMOS, PBGA119	ZBT SRAM, 1MX18, 3.5ns, CMOS, PBGA119
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	QFP, QFP100,.63X.87	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	QFP, QFP100,.63X.87	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50	BGA, BGA119,7X17,50
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	3.5 ns	3.8 ns	4.2 ns	4.2 ns	3.5 ns	3.8 ns	4.2 ns	3.8 ns	3.5 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PQFP-G100	R-PBGA-B119	R-PBGA-B119	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PBGA-B119	R-PBGA-B119	R-PBGA-B119
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	18874368 bi	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit
Memory IC Type	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
memory width	36	36	18	18	18	36	36	18	18
Humidity sensitivity level	3	3	3	3	3	3	3	3	3
Number of terminals	100	119	119	100	100	100	119	119	119
word count	524288 words	524288 words	1048576 words	1048576 words	1048576 words	524288 words	524288 words	1048576 words	1048576 words
character code	512000	512000	1000000	1000000	1000000	512000	512000	1000000	1000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	512KX36	512KX36	1MX18	1MX18	1MX18	512KX36	512KX36	1MX18	1MX18
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QFP	BGA	BGA	QFP	QFP	QFP	BGA	BGA	BGA
Encapsulate equivalent code	QFP100,.63X.87	BGA119,7X17,50	BGA119,7X17,50	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	BGA119,7X17,50	BGA119,7X17,50	BGA119,7X17,50
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	GRID ARRAY	GRID ARRAY	FLATPACK	FLATPACK	FLATPACK	GRID ARRAY	GRID ARRAY	GRID ARRAY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260	260
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A
Minimum standby current	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V	2.38 V
Maximum slew rate	0.32 mA	0.3 mA	0.28 mA	0.28 mA	0.32 mA	0.3 mA	0.28 mA	0.3 mA	0.32 mA
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	BALL	BALL	GULL WING	GULL WING	GULL WING	BALL	BALL	BALL
Terminal pitch	0.635 mm	1.27 mm	1.27 mm	0.635 mm	0.635 mm	0.635 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	BOTTOM	BOTTOM	QUAD	QUAD	QUAD	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	40	40	40	40	40	40	40	40
Maker	SAMSUNG	SAMSUNG	SAMSUNG	-	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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