General Purpose Schottky Diodes
FEATURES
Fast switching-PSEC
High breakdown voltage
Low cost - H-P equivalents
ENVIRONMENTAL RATINGS
(Maximum)
Operating Temperature. - - - - - - - -65°C to+200°C
Storage Temperature - - - - - - - - - -65°C to+200°C
Power Dissipation @ 25°C - - - - - - 100mWDerate
Linearly to zero at150°C
Soldering Temperature - - - - - 230°C for 5 seconds
G1
C1
105
*(Optional Package)
C21
Electrical Specifications @ 25
º
C - Single Diodes
PART
NUMBER
MP 2087
MP 2097
MP 2810
MP 2811
1N5712
1N5713
MP2835
MP2836
MP2800
MP2801
1N5711
CASE
STYLE
C1
C1
G1
G1
G1
G1
G1
C21
G1
C1
G1
V
B
(Min)
I
R
= 10
∝A
(Volts)
20
15
20
15
20
15
8
(1)
8
(1)
70
70
70
C
T
(Max)V V
F
(Max)I
f = 1 MHz I
F
= 1 mA
(pF)
(Volts)
1.1
1.1
1.2
1.2
1.2
1.2
1.0
0.9
2.0
1.9
2.0
0.41
0.41
0.41
0.41
0.55
0.41
0.34
0.34
0.41
0.41
0.41
(Min)
V
F
= 1.0 Volt
(mA)
F
R
I
R
(Max) @
(Volts)
( nA)
Lifetime(Max)
(pSec)
(3)
I
F
= 3mA
100
100
100
100
100
100
100
100
100
100
100
35
20
35
20
35
20
10
(2)
10
(2)
15
15
15
100
100
100
100
100
100
100
100
200
200
200
15
8
15
8
15
8
1
1
50
50
50
High Conductance Diodes
G1
C1
15
15
3.5
(1)
3.5
(1)
.30
.30
150
150
1000
1000
5
5
100
100
MP2232
MP2233
Note (1) : V
B
(min) measured with I
R
= 100
µA
Note (2) : I
F
(min) measured withV
F
= 0.45v
Note (3) : Krakauer method
General Purpose Schottky Diodes
Applications Data
100
10,000
150 C
125 C
100
10
1000
-50 C
100 C
75 C
50 C
25 C
10
1.0
0C
25 C
100
1.0
-25 C
0C
25 C
1
50 C
100 C
150 C
10
1
50 C
100 C
.01
0
.2
.4
.6
.8
1.0
V
F
- FORWARD VOLTAGE (V)
1.2
1.0
5.0
10
15
20
25
30
V
R
- REVERSE VOLTAGE (V)
Curve showing typical variation of
Reverse Current (I) vs. Reverse Voltage
R
(v
R
) at various temperatures for the
MP2810 or 1N5712 Schottky Diode
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5 10 15 20 25 30 35 40 45 50
V
R
- Reverse Voltage (V)
MP2835
MP2800
.01
150 C
0.2.4.6.8
1.2
1.0
V
F
- FORWARD VOLTAGE (V)
Curve showing typical temperature
variation under forward bias conditions
for the MP2811 Schottky Diode.
0
Curve showing typical te mperature
variation under forward bias conditions
for the MP2810 or 1N5712 Schottky
Diode
1000
100000
100
150ûC
150ûC
150ûC
10
125ûC
-50ûC
MP2800 envelope
150ûC
10000
125ûC
100
100ûC
1000
100ûC
1.0
-50ûC
MP2800
10
MP2835
100
75ûC
75ûC
50ûC
50ûC
0.1
MP2837
1
0.1
1.0
10
I
F
Foward Current (mA)
100
10
0
25ûC
1
25ûC
2 3 4
5 6 10 20 30 40 50 60
MP2835
MP2800
V
R
- Reverse Voltage (V)
0.01
0
0.2
0.4
0.6
0.8
1 . 0 1.2
V
F
- Foward Voltage (V)
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