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NX8562LB517

Description
LASER DIODE W/MONITOR,1.552UM PEAK WAVELENGTH,MODULE-BFVAR
CategoryLED optoelectronic/LED    photoelectric   
File Size72KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

NX8562LB517 Overview

LASER DIODE W/MONITOR,1.552UM PEAK WAVELENGTH,MODULE-BFVAR

NX8562LB517 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Reach Compliance Codeunknown
Maximum forward current0.3 A
Maximum forward voltage1.5 V
Installation featuresSURFACE MOUNT
Maximum operating temperature65 °C
Minimum operating temperature-20 °C
Optoelectronic device typesLASER DIODE
peak wavelength1552 nm
Semiconductor materialInGaAsP
surface mountYES
DATA SHEET
LASER DIODE
NX8562LB
1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE
CW LIGHT SOURCE FOR DWDM APPLICATIONS
DESCRIPTION
The NX8562LB is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
module with Polarization Maintain Fiber (PMF).
It is designed as Continuous Wave (CW) light source and ideal for optical transmission systems with external
modulators. The device is available for Dense Wavelength Division Multiplexing (DWDM) wavelengths based on
ITU-T recommendations, enabling a wide range of applications.
FEATURES
• Output power
P
f
= 20 mW MIN.
• Available for DWDM wavelengths based on ITU-T recommendations
(100 GHz grid, refer to the ORDERING INFORMATION)
• Internal thermo-electric cooler and isolator
• Hermetically sealed 14-pin butterfly package
• Polarization maintain fiber pigtail
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13824EJ4V0DS00 (4th edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
1998, 2001
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