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MMBT2907ARFG

Description
350mW, PNP Small Signal Transistor
CategoryDiscrete semiconductor    The transistor   
File Size143KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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MMBT2907ARFG Overview

350mW, PNP Small Signal Transistor

MMBT2907ARFG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)110 ns
Maximum opening time (tons)50 ns
Base Number Matches1
MMBT2907A
350mW, PNP Small Signal Transistor
Small Signal
Transistor
SOT-23
3 Collector
A
F
1 Base
2 Emitter
B
E
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
D
G
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Marking Code : 2F
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
3.00
1.40
0.50
2.00
2.55
1.20
Unit (inch)
Min
0.110
0.047
0.012
0.071
0.089
0.035
Max
0.118
0.055
0.020
0.079
0.100
0.043
0.550 REF
0.022 REF
Ordering Information
Package
Part No.
Packing
3K / 7" Reel
3K / 7" Reel
Marking
2F
2F
SOT-23 MMBT2907A RF
SOT-23 MMBT2907A RFG
Suggested PAD Layout
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
Symbol
P
D
V
CBO
V
CEO
V
EBO
I
C
T
J
, T
STG
Value
350
-60
-60
-5
-600
-55 to + 150
Units
mW
V
V
V
mA
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version :
A10

MMBT2907ARFG Related Products

MMBT2907ARFG MMBT2907ARF
Description 350mW, PNP Small Signal Transistor 350mW, PNP Small Signal Transistor
Is it Rohs certified? conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G3 ROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.6 A 0.6 A
Collector-emitter maximum voltage 60 V 60 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 50 50
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN OVER NICKEL Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
Maximum off time (toff) 110 ns 110 ns
Maximum opening time (tons) 50 ns 50 ns
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