MMBT2907A
350mW, PNP Small Signal Transistor
Small Signal
Transistor
SOT-23
3 Collector
A
F
1 Base
2 Emitter
B
E
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
D
G
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Marking Code : 2F
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
3.00
1.40
0.50
2.00
2.55
1.20
Unit (inch)
Min
0.110
0.047
0.012
0.071
0.089
0.035
Max
0.118
0.055
0.020
0.079
0.100
0.043
0.550 REF
0.022 REF
Ordering Information
Package
Part No.
Packing
3K / 7" Reel
3K / 7" Reel
Marking
2F
2F
SOT-23 MMBT2907A RF
SOT-23 MMBT2907A RFG
Suggested PAD Layout
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
Symbol
P
D
V
CBO
V
CEO
V
EBO
I
C
T
J
, T
STG
Value
350
-60
-60
-5
-600
-55 to + 150
Units
mW
V
V
V
mA
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version :
A10
MMBT2907A
350mW, PNP Small Signal Transistor
Small Signal
Transistor
Electrical Characteristics
Type Number
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Base Cut-off Current
I
C
= -10μA
I
C
= -10mA
I
E
= -10μA
V
CB
= -50V
V
CE
= -30V
V
CE
= -30V
V
CE
= -10V
V
CE
= -10V
DC current gain
V
CE
= -10V
V
CE
= -10V
V
CE
= -10V
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Output Capacitance
Intput Capacitance
Delay time
Rise time
Storage time
Fall time
V
CE
= -20V
V
CB
=-10V
V
EB
=-2V
V
CE
=-30V
V
CE
=-30V
V
CE
=-6V
V
CE
=-6V
I
C
= -150mA
I
C
= -500mA
I
C
= -150mA
I
C
= -500mA
I
C
= -50mA
I
E
=0
I
C
=0
I
C
=-150mA
I
C
=-150mA
I
C
=-150mA
I
C
=-150mA
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
V
BE(OFF)
= -0.5V
V
BE(OFF)
= -0.5V
I
C
= -0.1mA
I
C
= -1mA
I
C
= -10mA
I
C
= -150mA
I
C
= -500mA
I
B
= -15mA
I
B
= -50mA
I
B
= -15mA
I
B
= -50mA
f= 100MHz
f= 100KHz
f= 100KHz
I
B1
=-15mA
I
B1
=-15mA
I
B1
=-I
B2
=-15mA
I
B1
=-I
B2
=-15mA
V
CE(sat)
V
BE(sat)
f
T
C
obo
C
ibo
t
d
t
r
t
s
t
f
h
FE
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
B
Min
-60
-60
-5
-
-
-
75
100
100
100
50
-
-
200
-
-
-
-
-
-
Max
-
-
-
-20
-50
-50
-
-
-
300
-
-0.4
-1.6
-1.3
-2.6
-
8.0
30
10
40
80
30
V
V
MHz
pF
pF
nS
nS
nS
nS
Units
V
V
V
nA
nA
nA
Tape & Reel specification
TSC label
Top Cover Tape
Carieer Tape
Any Additional Label (If Required)
P0
d
T
A
C
B
F
W
P1
E
Item
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
W1
D
D2
D1
Direction of Feed
Version :
A10
MMBT2907A
350mW, PNP Small Signal Transistor
Small Signal
Transistor
Rating and Characteristic Curves
V
CESAT
- COLLECTOR EMITTE R VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β
= 10
0.4
0.3
0.2
0.1
0
125
°
C
- 40
°
C
400
300
200
100
0
0.1
125 °C
25 °C
25 °C
- 40 °C
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
500
V
BE( ON)
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40
°
C
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
0.1
- 40
°
C
0.8
0.6
0.4
0.2
0
25 °C
25 °C
125
°
C
β
= 10
125
°
C
V
CE
= 5V
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
1
10
I
C
- COLLECTOR CURRE NT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
100
V
CB
= 35V
10
Input and Output Capacitance
vs Reverse Bias Voltage
20
CAPACITANCE (pF)
16
12
C ib
1
8
4
0
0.1
C ob
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
10
REVERSE BIAS VOLTAGE (V)
50
Version :
A10
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