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TSB1424_11

Description
Low Vcesat PNP Transistor
File Size136KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSB1424_11 Overview

Low Vcesat PNP Transistor

TSB1424
Low Vcesat PNP Transistor
SOT-89
SOT-23
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
-20V
-20V
-3A
-0.2V @ I
C
/ I
B
= -2A / -100mA
Features
Low V
CE(SAT)
-0.2 @ I
C
/ I
B
= -2A / -100mA (Typ.)
Complementary part with TSD2150
Ordering Information
Part No.
TSB1424CY RM
TSB1424CY RMG
TSB1424CX RF
TSB1424CX RFG
Package
SOT-89
SOT-89
SOT-23
SOT-23
Packing
1Kpcs / 7” Reel
1Kpcs / 7” Reel
3Kpcs / 7” Reel
3Kpcs / 7” Reel
Structure
Epitaxial Planar Type
PNP Silicon Transistor
Note:
“G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note:
1. Single pulse, Pw=10ms, Duty≤50%
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
SOT-89
SOT-23
-20
-20
-6
-3
-5 (note1)
0.6
0.3
2 (note 2)
1 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Conditions
I
C
= -50uA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -50uA, I
C
= 0
V
CB
= -20V, I
E
= 0
V
EB
= -5V, I
C
= 0
I
C
/ I
B
= -2A / -100mA
V
CE
= -2V, I
C
= 100mA
V
CE
=-2V, I
E
=0.5A,
f=100MHz
V
CB
= -10V, I
E
= 0,
f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Cob
Min
-20
-20
-6
--
--
--
180
--
--
Typ
--
--
--
--
--
-0.2
--
200
28
Max
--
--
--
-0.1
-0.1
-0.5
390
--
--
Unit
V
V
V
uA
uA
V
MHz
pF
1/5
Version: E11

TSB1424_11 Related Products

TSB1424_11 TSB1424CXRF TSB1424CXRFG TSB1424CYRM TSB1424CYRMG
Description Low Vcesat PNP Transistor Low Vcesat PNP Transistor Low Vcesat PNP Transistor Low Vcesat PNP Transistor Low Vcesat PNP Transistor
Maker - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor -
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code - unknow unknow unknow compli
ECCN code - EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) - 3 A 3 A 3 A 3 A
Collector-emitter maximum voltage - 20 V 20 V 20 V 20 V
Configuration - SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - 180 180 180 180
JESD-30 code - R-PDSO-G3 R-PDSO-G3 R-PSSO-F3 R-PSSO-F3
Number of components - 1 1 1 1
Number of terminals - 3 3 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - PNP PNP PNP PNP
Certification status - Not Qualified Not Qualified Not Qualified -
surface mount - YES YES YES YES
Terminal form - GULL WING GULL WING FLAT FLAT
Terminal location - DUAL DUAL SINGLE SINGLE
Transistor component materials - SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) - 200 MHz 200 MHz 200 MHz 200 MHz

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