2SC2412-S-T datasheet, PDF - EEWORLD Datasheet

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2SC2412-S-T: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size76KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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2SC2412-S-T Overview

Transistor

2SC2412-S-T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	,
Reach Compliance Code	unknow
JESD-609 code	e0
Humidity sensitivity level	1
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

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MCC

Micro Commercial Components

TM

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SC2412

2SC2412-Q

2SC2412-R

2SC2412-S

NPN Silicon

Epitaxial Transistors

Features

•

Power Dissipation: 0.2W (T

A

=25 )

Collector Current: 0.15A

Collector-base Voltage: 60V

Maximum Ratings

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

C

T

J

T

STG

Case Material: Molded Plastic.

Classification Rating 94V-0

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Collector power dissipation

Junction Temperature

Storage Temperature

UL Flammability

Rating

50

60

7.0

0.15

0.2

-55 to +150

Unit

V

A

W

O

C

O

C

F

SOT-23

A

D

C

B

E

Electrical Characteristics @ 25

O

C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Voltage

(I

C

=1.0mAdc, I

B

=0)

Collector-Base Voltage

(I

C

=50uAdc, I

E

=0)

Emitter-Base Voltage

(I

E

=50uAdc, I

C

=0)

Collector Cutoff Current

(V

CB

=60Vdc,I

E

=0)

Emitter Cutoff Current

(V

EB

=7.0Vdc, I

C

=0)

DC Current Gain

(I

C

=1.0mAdc, V

CE

=6.0Vdc)

Collector Saturation Voltage

(I

C

=50mAdc, I

B

=5.0mAdc)

Transition Frequency

(V

CE

=12Vdc, I

C

=2.0mAdc,

f=100MHz)

Min

50

60

7.0

---

Typ

---

Max

---

0.1

Units

Vdc

uAdc

DIM

A

B

C

D

E

F

G

H

J

K

G

E

OFF CHARACTERISTICS

V

CEO

V

CBO

V

EBO

I

CBO

I

EBO

K

H

J

DIMENSIONS

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MM

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

ON CHARACTERISTICS

h

FE

V

CE(sat)

f

T

120

---

150

---

560

0.4

---

Vdc

MHz

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Suggested Solder

Pad Layout

.031

.800

CLASSIFICATION OF hFE

Rank

Range

Marking

Q

120-270

BQ

R

180-390

BR

S

270-560

BS

.035

.900

.079

2.000

inches

mm

.037

.950

.037

.950

Revision:

2

www.mccsemi.com

1 of 2

2007/03/01

2SC2412-S-T Related Products

	2SC2412-S-T	2SC2412-Q-T	2SC2412-R-T	2SC2412-T
Description	Transistor	Transistor	Transistor	Transistor
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknow	unknow	unknow	unknow
JESD-609 code	e0	e0	e0	e0
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Humidity sensitivity level	1	1	1	-
Base Number Matches	1	1	1	-

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