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ES2G

CategoryDiscrete semiconductor    Super fast recovery diode   
File Size185KB,2 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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ES2A THRU ES2J
2.0AMPS. SUPER FAST SURFACE MOUNT RECTIFIER
FEATURE
.High
current capability
.Low
forward voltage drop
.Low
power loss, high efficiency
.High
surge capability
.High
temperature soldering guaranteed:
260℃/10 seconds at terminals.
.Superfast
recovery time for high efficiency.
.For
surface mounted application.
.Easy
pick and place.
.
083(2.
11)
.
075(1.
91)
SMB(DO-214AA)
.
155(3.
94)
.
130(3.
30)
.
185(4.
70)
.
160(4.
06)
.
012(0.
305)
.
006(0.
152)
.
103(2.
60)
.
078(1.
98)
.
060((1.
52)
.
032(0.
80)
MECHANICAL DATA
.Case:
Molded plastic
.Epoxy:
UL94V-0 rate flame retardant
.Lead:
MIL-STD- 202E, Method 208 guaranteed
.Polarity:Color
band denotes cathode end
.Packaging:12mm
tape per EIA STD RS-481
.Mounting
position: Any
.
008(0.
203)
.
002(0.
051)
.
217(5.
50)
.
193(4.
9)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
at T
A
=55°C
Peak Forward Surge Current 8.3ms single half
sine- wave superimposed on rated load (JEDEC
method)
Maximum Forward Voltage at 2.0A DC
Maximum DC Reverse Current
at rated DC blocking voltage
@T
A
=25°C
@T
A
=100°C
SYM
BOL
ES2A
50
35
50
ES2B
100
70
100
ES2D
200
140
200
2.0
ES2G
400
280
400
ES2J
600
420
600
units
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
(JA)
T
STG
T
J
60.0
0.95
5.0
100.0
35
10
75
-55 to +150
-55 to +150
8
1.3
1.7
A
V
µA
nS
pF
°C /W
°C
°C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Storage Temperature
Operation Junction Temperature
Note:
1. Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Measured on P.C.Board with 0.2×0.2”(5.0×5.0mm)Copper Pad Areas.
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