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2SC2412-R-T

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size76KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric Compare View All

2SC2412-R-T Overview

Transistor

2SC2412-R-T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
JESD-609 codee0
Humidity sensitivity level1
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SC2412
2SC2412-Q
2SC2412-R
2SC2412-S
NPN Silicon
Epitaxial Transistors
Features
Power Dissipation: 0.2W (T
A
=25 )
Collector Current: 0.15A
Collector-base Voltage: 60V
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Case Material: Molded Plastic.
Classification Rating 94V-0
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
UL Flammability
Rating
50
60
7.0
0.15
0.2
-55 to +150
-55 to +150
Unit
V
V
V
A
W
O
C
O
C
F
SOT-23
A
D
C
C
B
B
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Voltage
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Voltage
(I
C
=50uAdc, I
E
=0)
Emitter-Base Voltage
(I
E
=50uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=60Vdc,I
E
=0)
Emitter Cutoff Current
(V
EB
=7.0Vdc, I
C
=0)
DC Current Gain
(I
C
=1.0mAdc, V
CE
=6.0Vdc)
Collector Saturation Voltage
(I
C
=50mAdc, I
B
=5.0mAdc)
Transition Frequency
(V
CE
=12Vdc, I
C
=2.0mAdc,
f=100MHz)
Min
50
60
7.0
---
---
Typ
---
---
---
---
---
Max
---
---
---
0.1
0.1
Units
Vdc
Vdc
Vdc
uAdc
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
G
E
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
K
H
J
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
ON CHARACTERISTICS
h
FE
V
CE(sat)
f
T
120
---
150
---
---
---
560
0.4
---
---
Vdc
MHz
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
120-270
BQ
R
180-390
BR
S
270-560
BS
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision:
2
www.mccsemi.com
1 of 2
2007/03/01

2SC2412-R-T Related Products

2SC2412-R-T 2SC2412-Q-T 2SC2412-S-T 2SC2412-T
Description Transistor Transistor Transistor Transistor
Is it Rohs certified? incompatible incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow unknow
JESD-609 code e0 e0 e0 e0
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Humidity sensitivity level 1 1 1 -
Base Number Matches 1 1 1 -
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