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MMBD717

Description
0.2 A, 20 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size61KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MMBD717 Overview

0.2 A, 20 V, SILICON, SIGNAL DIODE

ON Semiconductort
Common Anode
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Extremely Fast Switching Speed
MMBD717LT1
ON Semiconductor Preferred Device
20 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
Extremely Low Forward Voltage — 0.28 Volts (Typ) @ IF = 1 mAdc
ANODE
3
CATHODE
1
2
CATHODE
1
2
3
CASE 419–04, STYLE 4
SOT–323 (SC–70)
MAXIMUM RATINGS
(TJ = 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction
Temperature Range
Storage Temperature Range
Symbol
VR
PF
200
1.6
TJ
–55 to +150
Tstg
–55 to +150
°C
mW
mW/°C
°C
Value
20
Unit
Volts
DEVICE MARKING
MMBD717LT1 = B3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10
µA)
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 10 V)
(For each individual diode while the second diode is unbiased)
Forward Voltage
(IF = 1.0 mAdc)
Symbol
V(BR)R
CT
IR
VF
Min
20
Typ
2.0
0.05
0.28
Max
2.5
1.0
0.37
Unit
Volts
pF
µAdc
Vdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 6
Publication Order Number:
MMBD717LT1/D

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