MMBD717LT1D datasheet, PDF - EEWORLD Datasheet

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MMBD717LT1D: Description0.2 A, 20 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size61KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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MMBD717LT1D Overview

0.2 A, 20 V, SILICON, SIGNAL DIODE

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ON Semiconductort

Common Anode

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

•

Extremely Fast Switching Speed

MMBD717LT1

ON Semiconductor Preferred Device

20 VOLT

SCHOTTKY BARRIER

DETECTOR AND SWITCHING

DIODES

•

Extremely Low Forward Voltage — 0.28 Volts (Typ) @ IF = 1 mAdc

ANODE

CATHODE

CASE 419–04, STYLE 4

SOT–323 (SC–70)

MAXIMUM RATINGS

(TJ = 125°C unless otherwise noted)

Rating

Reverse Voltage

Forward Power Dissipation

@ TA = 25°C

Derate above 25°C

Operating Junction

Temperature Range

Storage Temperature Range

Symbol

200

1.6

–55 to +150

Tstg

–55 to +150

°C

mW/°C

°C

Value

Unit

Volts

DEVICE MARKING

MMBD717LT1 = B3

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic

Reverse Breakdown Voltage

(IR = 10

µA)

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

Reverse Leakage (VR = 10 V)

(For each individual diode while the second diode is unbiased)

Forward Voltage

(IF = 1.0 mAdc)

Symbol

V(BR)R

Min

—

Typ

—

2.0

0.05

0.28

Max

—

2.5

1.0

0.37

Unit

Volts

µAdc

Vdc

Preferred

devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

November, 2001 – Rev. 6

Publication Order Number:

MMBD717LT1/D

MMBD717LT1D Related Products

	MMBD717LT1D	MMBD717
Description	0.2 A, 20 V, SILICON, SIGNAL DIODE	0.2 A, 20 V, SILICON, SIGNAL DIODE

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